STH47N60DM6-2AG footprint, schematic symbol and 3D model by STMicroelectronics

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STH47N60DM6-2AG - STMicroelectronics PCB footprint - Other - Other - STH47N60DM6-2AG

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Datasheet Download Datasheet
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Part Number STH47N60DM6-2AG
Manufacturer STMicroelectronics
Pin Count 3
Part Category MOSFET (N-Channel)
Package Category Other
Footprint Name Other - STH47N60DM6-2AG
Released Date Oct 10, 2022
Last Modified Date Apr 3, 2025 2:30 PM UTC
Pinout / Pin List Click Here (Member Only)

STH47N60DM6-2AG Details

Manufacturer Part Number:
STH47N60DM6-2AG
Brand Name:
STMicroelectronics
Rohs Code:
Yes
Part Life Cycle Code:
Obsolete
Country Of Origin:
Mainland China
ECCN Code:
EAR99
Factory Lead Time:
111 Weeks
Manufacturer:
STMicroelectronics
YTEOL:
0
Additional Feature:
BULK: 1000
Avalanche Energy Rating (Eas):
700 mJ
Case Connection:
DRAIN
Configuration:
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min:
600 V
Drain Current-Max (ID):
36 A
Drain-source On Resistance-Max:
0.08 Ω
FET Technology:
METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss):
2 pF
JESD-30 Code:
R-PSSO-G2
Number of Elements:
1
Number of Terminals:
2
Operating Mode:
ENHANCEMENT MODE
Operating Temperature-Max:
150 °C
Operating Temperature-Min:
-55 °C
Package Body Material:
PLASTIC/EPOXY
Package Shape:
RECTANGULAR
Package Style:
SMALL OUTLINE
Polarity/Channel Type:
N-CHANNEL
Power Dissipation-Max (Abs):
250 W
Pulsed Drain Current-Max (IDM):
137 A
Reference Standard:
AEC-Q101
Surface Mount:
YES
Terminal Form:
GULL WING
Terminal Position:
SINGLE
Transistor Application:
SWITCHING
Transistor Element Material:
SILICON

STH47N60DM6-2AG Frequently Asked Questions (FAQs)

The maximum operating temperature range for the STH47N60DM6-2AG is -40°C to 150°C, as specified in the datasheet. However, it's recommended to derate the power dissipation above 125°C to ensure reliable operation.
To ensure the MOSFET is fully turned on, you need to apply a gate-source voltage (Vgs) that is higher than the specified threshold voltage (Vth). For the STH47N60DM6-2AG, Vth is typically around 2.5V, so a Vgs of at least 5V is recommended to ensure the MOSFET is fully turned on.
The maximum current rating for the STH47N60DM6-2AG is 47A, as specified in the datasheet. However, this rating is based on a specific set of conditions, including a maximum junction temperature of 150°C and a minimum gate-source voltage of 5V. You should ensure that your application meets these conditions to avoid exceeding the maximum current rating.
To protect the MOSFET from overvoltage and overcurrent, you can use a combination of voltage regulators, current sensors, and protection circuits. For example, you can use a voltage regulator to limit the voltage applied to the MOSFET, and a current sensor to monitor the current flowing through the MOSFET. You can also use a protection circuit, such as a crowbar circuit, to quickly turn off the MOSFET in case of an overvoltage or overcurrent condition.
The typical rise and fall time for the STH47N60DM6-2AG is around 10-20ns, depending on the specific application and operating conditions. This is relatively fast compared to other MOSFETs, making it suitable for high-frequency switching applications.

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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