STH65N050DM9-7AG - STMicroelectronics

STH65N050DM9-7AG Details

• Manufacturer Part Number:

  STH65N050DM9-7AG

• Rohs Code:

  Yes

• Part Life Cycle Code:

  Active

• Country Of Origin:

  Mainland China

• ECCN Code:

  EAR99

• Manufacturer:

  STMicroelectronics

• YTEOL:

  8

• Avalanche Energy Rating (Eas):

  760 mJ

• Case Connection:

  DRAIN

• Configuration:

  SINGLE WITH BUILT-IN DIODE

• DS Breakdown Voltage-Min:

  650 V

• Drain Current-Max (ID):

  51 A

• Drain-source On Resistance-Max:

  0.05 Ω

• FET Technology:

  METAL-OXIDE SEMICONDUCTOR

• JESD-30 Code:

  R-PSSO-G7

• Number of Elements:

  1

• Number of Terminals:

  7

• Operating Mode:

  ENHANCEMENT MODE

• Operating Temperature-Max:

  150 °C

• Operating Temperature-Min:

  -55 °C

• Package Body Material:

  PLASTIC/EPOXY

• Package Shape:

  RECTANGULAR

• Package Style:

  SMALL OUTLINE

• Polarity/Channel Type:

  N-CHANNEL

• Power Dissipation-Max (Abs):

  266 W

• Pulsed Drain Current-Max (IDM):

  220 A

• Reference Standard:

  AEC-Q101

• Surface Mount:

  YES

• Terminal Form:

  GULL WING

• Terminal Position:

  SINGLE

• Transistor Application:

  SWITCHING

• Transistor Element Material:

  SILICON