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STI18N65M2 - STMicroelectronics

Description: N-channel 650 V, 0.275 Ω typ., 12 A MDmesh™ M2 Power MOSFET in I²PAK and TO-220 packages

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STI18N65M2 - STMicroelectronics - PCB symbol
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PCB Footprints
STI18N65M2 - STMicroelectronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - I²PAK (TO-262)-ren1
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STI18N65M2 - STMicroelectronics - 3D model - Transistor Outline, Vertical - I²PAK (TO-262)-ren1
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STI18N65M2 Details

  • Manufacturer Part Number:

    STI18N65M2

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    14 Weeks

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    6

  • Configuration:

    SINGLE

  • Drain Current-Max (ID):

    12 A

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Operating Temperature-Max:

    150 °C

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    110 W

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn)

STI18N65M2 Frequently Asked Questions (FAQs)

  • The maximum junction temperature (Tj) for the STI18N65M2 is 175°C. However, it's recommended to keep the junction temperature below 150°C for reliable operation and to ensure a long lifespan.
  • To calculate the power dissipation of the STI18N65M2, you need to consider the voltage drop across the device (Vds), the current flowing through it (Ids), and the thermal resistance (Rthja). The power dissipation (Pd) can be calculated using the formula: Pd = Vds x Ids x Rthja. You can find the values for Vds, Ids, and Rthja in the datasheet.
  • For optimal performance and thermal management, it's recommended to follow a good PCB layout practice for the STI18N65M2. This includes using a large copper area for heat dissipation, keeping the device away from other heat sources, and using thermal vias to dissipate heat to the bottom layer of the PCB. You can find more detailed guidelines in the STMicroelectronics application notes and layout recommendations.
  • Yes, the STI18N65M2 is suitable for high-frequency switching applications up to 100 kHz. However, you need to consider the device's switching characteristics, such as the rise and fall times, and ensure that the device is properly driven to minimize switching losses. You may also need to add snubbers or other components to reduce electromagnetic interference (EMI).
  • To protect the STI18N65M2 from overvoltage and overcurrent, you can use a combination of voltage regulators, overvoltage protection (OVP) circuits, and current sensing resistors. You can also use a dedicated IC, such as a voltage supervisor or a power management IC, to monitor the voltage and current levels and provide protection against faults.

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STI18N65M2 Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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