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STI20N65M5 - STMicroelectronics

Description: N-channel 650 V, 160 mΩ typ., 18 A MDmesh V Power MOSFET in D²PAK, I²PAK, TO-220 and TO-247 packages

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STI20N65M5 - STMicroelectronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - I2PAK_2022-1
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STI20N65M5 - STMicroelectronics  - 3D model - Transistor Outline, Vertical - I2PAK_2022-1
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STI20N65M5 Details

  • Manufacturer Part Number:

    STI20N65M5

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    TO-262, I2PAK-3

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    14 Weeks

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    270 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    650 V

  • Drain Current-Max (ID):

    18 A

  • Drain-source On Resistance-Max:

    0.19 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-262AA

  • JESD-30 Code:

    R-PSIP-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    IN-LINE

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    130 W

  • Pulsed Drain Current-Max (IDM):

    72 A

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

STI20N65M5 Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) of the STI20N65M5 is not explicitly stated in the datasheet, but it can be determined by consulting the application notes and thermal derating curves provided by STMicroelectronics. Typically, the SOA is limited by the maximum junction temperature, voltage, and current ratings.
  • To ensure proper thermal management, it's essential to provide a good thermal path from the device to a heat sink or the PCB. This can be achieved by using a thermal interface material, such as thermal paste or thermal tape, and ensuring good contact between the device and the heat sink. Additionally, the PCB design should allow for good airflow and thermal conduction.
  • The recommended gate drive voltage for the STI20N65M5 is typically between 10V to 15V, depending on the specific application and switching frequency. However, it's essential to consult the datasheet and application notes for specific guidance on gate drive voltage and current requirements.
  • To protect the STI20N65M5 from ESD, it's essential to handle the device with care, using anti-static wrist straps, mats, and packaging materials. Additionally, the PCB design should include ESD protection components, such as TVS diodes or ESD protection arrays, to prevent ESD events from damaging the device.
  • The maximum allowed dv/dt for the STI20N65M5 is typically around 10V/ns to 20V/ns, depending on the specific application and operating conditions. However, it's essential to consult the datasheet and application notes for specific guidance on dv/dt ratings and how to mitigate the effects of high dv/dt on the device.

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STI20N65M5 Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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