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STI24NM60N - STMicroelectronics

Description: N-channel 600 V, 0.168 Ω typ., 17 A MDmesh™ II Power MOSFETs V, 0.168 Ω typ., 17 A MDmesh™ II Power MOSFETs

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STI24NM60N - STMicroelectronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - I²PAK
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STI24NM60N - STMicroelectronics  - 3D model - Transistor Outline, Vertical - I²PAK
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STI24NM60N Details

  • Manufacturer Part Number:

    STI24NM60N

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-262AA

  • Package Description:

    ROHS COMPLIANT, TO-262, I2PAK-3

  • Pin Count:

    3

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    14 Weeks

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    300 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    17 A

  • Drain-source On Resistance-Max:

    0.19 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-262AA

  • JESD-30 Code:

    R-PSIP-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    IN-LINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    68 A

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

STI24NM60N Frequently Asked Questions (FAQs)

  • The maximum junction temperature (Tj) of the STI24NM60N is 175°C. However, it's recommended to keep the junction temperature below 150°C for reliable operation and to prevent thermal runaway.
  • The thermal resistance of the STI24NM60N can be calculated using the following formula: Rth(j-a) = (Tj - Ta) / Pd, where Rth(j-a) is the thermal resistance, Tj is the junction temperature, Ta is the ambient temperature, and Pd is the power dissipation. The datasheet provides the thermal resistance values for different packages and mounting conditions.
  • The recommended gate resistor value for the STI24NM60N depends on the specific application and the required switching frequency. A general guideline is to use a gate resistor value between 10 ohms and 100 ohms. However, it's recommended to consult the application note or the datasheet for more specific guidance.
  • Yes, the STI24NM60N is suitable for high-frequency switching applications up to 100 kHz. However, it's essential to consider the device's switching characteristics, such as the rise and fall times, and the gate charge, to ensure reliable operation and minimize losses.
  • To protect the STI24NM60N from overvoltage and overcurrent, it's recommended to use a voltage clamp or a transient voltage suppressor (TVS) to limit the voltage stress. Additionally, a current sense resistor and a fuse can be used to detect and limit overcurrent conditions.

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STI24NM60N Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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