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STI24NM65N - STMicroelectronics

Description: N-channel 650 V - 0.16 Ω - 19 A - TO-220 - TP-220FP - D²PAK - I²PAK - TO-247 second generation MDmesh™ Power MOSFET

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STI24NM65N - STMicroelectronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - I2PAK (TO-262)
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STI24NM65N - STMicroelectronics  - 3D model - Transistor Outline, Vertical - I2PAK (TO-262)
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STI24NM65N Details

  • Manufacturer Part Number:

    STI24NM65N

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-262AA

  • Package Description:

    ROHS COMPLIANT, TO-262, I2PAK-3

  • Pin Count:

    3

  • ECCN Code:

    EAR99

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    500 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    650 V

  • Drain Current-Max (ID):

    19 A

  • Drain-source On Resistance-Max:

    0.19 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-262AA

  • JESD-30 Code:

    R-PSIP-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    IN-LINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    160 W

  • Pulsed Drain Current-Max (IDM):

    76 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

STI24NM65N Frequently Asked Questions (FAQs)

  • The maximum junction temperature (Tj) for the STI24NM65N is 150°C. However, it's recommended to keep the junction temperature below 125°C for reliable operation and to ensure the device's lifespan.
  • To ensure proper cooling, it's essential to provide a good thermal path from the device to a heat sink or a metal plate. Use a thermal interface material (TIM) with a thermal conductivity of at least 1 W/mK between the device and the heat sink. Additionally, ensure good airflow around the heat sink to dissipate heat efficiently.
  • The recommended gate drive voltage for the STI24NM65N is between 10V and 15V. However, the device can tolerate up to 20V gate drive voltage. It's essential to ensure the gate drive voltage is within the recommended range to prevent damage to the device.
  • Yes, the STI24NM65N is suitable for high-frequency switching applications up to 100 kHz. However, it's essential to consider the device's switching losses, gate drive requirements, and thermal management when designing the application.
  • To protect the STI24NM65N from overvoltage and overcurrent, use a suitable voltage regulator and overcurrent protection circuitry. Additionally, consider using a TVS (Transient Voltage Suppressor) diode to protect the device from voltage transients and spikes.

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STI24NM65N Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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