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STI47N60DM6AG - STMicroelectronics

Description: Automotive-grade N-channel 600 V, 70 mΩ typ., 36 A MDmesh™ DM6 Power MOSFET in an I²PAK package

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STI47N60DM6AG - STMicroelectronics PCB footprint - Other - Other -  I²PAK package
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STI47N60DM6AG Details

  • Manufacturer Part Number:

    STI47N60DM6AG

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    I2PAK-3

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    14 Weeks

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    4

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    700 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    36 A

  • Drain-source On Resistance-Max:

    0.08 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    2 pF

  • JESD-30 Code:

    R-PSIP-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    IN-LINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    250 W

  • Pulsed Drain Current-Max (IDM):

    137 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

STI47N60DM6AG Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the STI47N60DM6AG is -40°C to 150°C, as specified in the datasheet. However, it's recommended to derate the device's performance at higher temperatures to ensure reliability and longevity.
  • To ensure proper cooling, consider the device's thermal resistance (Rth(j-c) = 0.35°C/W) and maximum junction temperature (Tj = 150°C). Use a heat sink or thermal interface material to reduce thermal resistance, and ensure good airflow around the device. You can also use thermal simulation tools to optimize your design.
  • The recommended gate drive voltage for the STI47N60DM6AG is between 10V and 15V, with a maximum gate-source voltage of ±20V. A higher gate drive voltage can improve switching performance, but be careful not to exceed the maximum rating to avoid damage.
  • To protect the STI47N60DM6AG from overvoltage and overcurrent, use a voltage regulator or overvoltage protection (OVP) circuit to limit the voltage to the recommended maximum rating (600V). Additionally, consider using a current sense resistor and overcurrent protection (OCP) circuit to detect and respond to excessive current.
  • For optimal performance and reliability, follow good PCB design practices: keep the drain and source pins as close as possible, use a solid ground plane, and minimize trace inductance. Also, ensure the gate drive signal has a low impedance path to the gate pin, and use a decoupling capacitor to filter the gate voltage.

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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