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STL120N10F8 - STMicroelectronics

Description: N‑channel enhancement mode standard level 100 V, 4.6 mΩ max., 125 A STripFET F8 Power MOSFET in a PowerFLAT 5x6 package

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STL120N10F8 - STMicroelectronics - PCB symbol
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STL120N10F8 - STMicroelectronics PCB footprint - Other - Other - STL120N10F8-1
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STL120N10F8 - STMicroelectronics - 3D model - Other - STL120N10F8-1
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STL120N10F8 Details

  • Manufacturer Part Number:

    STL120N10F8

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    13 Weeks

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    9

  • Additional Feature:

    BULK: 3000

  • Avalanche Energy Rating (Eas):

    140 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    125 A

  • Drain-source On Resistance-Max:

    0.0046 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    25 pF

  • JESD-30 Code:

    R-PDSO-F8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    150 W

  • Pulsed Drain Current-Max (IDM):

    500 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

STL120N10F8 Frequently Asked Questions (FAQs)

  • The maximum junction temperature for the STL120N10F8 is 150°C. It's essential to ensure that the device does not exceed this temperature to prevent damage or malfunction.
  • To calculate the power dissipation, you need to consider the voltage and current ratings of the device. The power dissipation (Pd) can be calculated using the formula: Pd = Vds * Id, where Vds is the drain-source voltage and Id is the drain current. You can find the maximum power dissipation rating in the datasheet.
  • For optimal performance, it's recommended to follow a good PCB layout practice, such as keeping the power traces short and wide, using a solid ground plane, and placing decoupling capacitors close to the device. You can refer to the application note or the manufacturer's guidelines for more specific recommendations.
  • Yes, the STL120N10F8 is suitable for high-frequency switching applications due to its low gate charge and fast switching times. However, you need to ensure that the device is properly driven and that the PCB layout is optimized for high-frequency operation.
  • To protect the STL120N10F8 from overvoltage and overcurrent, you can use a combination of voltage regulators, TVS diodes, and current sense resistors. Additionally, you can implement overcurrent protection using a dedicated IC or a microcontroller-based solution.

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STL120N10F8 Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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