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STL130N6F7 - STMicroelectronics

Description: N-channel 60 V, 0.003 Ω typ., 130 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package

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STL130N6F7 - STMicroelectronics - PCB symbol
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PCB Footprints
STL130N6F7 - STMicroelectronics PCB footprint - Other - Other - PowerFLAT 5x6_1
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STL130N6F7 - STMicroelectronics - 3D model - Other - PowerFLAT 5x6_1
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STL130N6F7 Details

  • Manufacturer Part Number:

    STL130N6F7

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    26 Weeks

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    5.6

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    130 A

  • Drain-source On Resistance-Max:

    0.0035 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-F5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    520 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

STL130N6F7 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the STL130N6F7 is -40°C to 150°C.
  • To ensure proper biasing, connect the gate to a voltage source through a resistor, and connect the source to ground through a resistor. The recommended biasing conditions are VGS = 5V, VDS = 10V, and ID = 10mA.
  • To minimize parasitic inductance, use a compact PCB layout with short, wide traces. Place the device close to the power source, and use a solid ground plane to reduce inductance. Avoid using vias under the device, and keep the drain and source pins as close as possible.
  • To protect the STL130N6F7 from ESD, handle the device in an ESD-safe environment, use ESD-protective packaging, and ensure that all equipment and tools are properly grounded. Avoid touching the device pins, and use an ESD wrist strap or mat when handling the device.
  • To prevent moisture damage, store the STL130N6F7 in a dry, cool place with a relative humidity below 60%. Avoid storing the device in direct sunlight or near heat sources. Use airtight packaging or a dry nitrogen-filled package to prevent moisture absorption.

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STL130N6F7 Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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