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STL13N60DM2 - STMicroelectronics

Description: N-channel 600 V, 0.350 Ω typ., 8 A MDmesh™ DM2 Power MOSFET in a PowerFLAT™ 5x6 HV package

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STL13N60DM2 - STMicroelectronics PCB footprint - Other - Other - STL13N60DM2-1
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STL13N60DM2 Details

  • Manufacturer Part Number:

    STL13N60DM2

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Manufacturer Package Code:

    PowerFLAT 5x6 HV

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    16 Weeks

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    6

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    340 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    8 A

  • Drain-source On Resistance-Max:

    0.37 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    0.9 pF

  • JESD-30 Code:

    R-PDSO-F5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    52 W

  • Pulsed Drain Current-Max (IDM):

    32 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

STL13N60DM2 Frequently Asked Questions (FAQs)

  • The maximum operating junction temperature of the STL13N60DM2 is 150°C.
  • Yes, the STL13N60DM2 is suitable for high-frequency switching applications up to 100 kHz due to its low gate charge and internal gate resistance.
  • To minimize switching losses, ensure the gate drive voltage is sufficient (typically 10-15V), and the gate resistance is minimized (e.g., using a low-impedance gate driver).
  • To minimize parasitic inductance, use a compact PCB layout with short, wide traces for the drain, source, and gate connections. Avoid using vias or narrow traces, and keep the decoupling capacitors close to the device.
  • Yes, the STL13N60DM2 is suitable for synchronous rectification applications due to its low voltage drop and fast switching characteristics.

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STL13N60DM2 Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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