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STL24N60M2 - STMicroelectronics

Description: N-channel 600 V, 0.186 Ω typ., 18 A MDmesh™ M2 Power MOSFET in a PowerFLAT™ 8x8 HV package

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STL24N60M2 - STMicroelectronics PCB footprint - Other - Other - STL24N60M2-1
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STL24N60M2 Details

  • Manufacturer Part Number:

    STL24N60M2

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    14 Weeks

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    180 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    18 A

  • Drain-source On Resistance-Max:

    0.21 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    2.2 pF

  • JESD-30 Code:

    S-PSSO-N4

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    3

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    125 W

  • Pulsed Drain Current-Max (IDM):

    72 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

STL24N60M2 Frequently Asked Questions (FAQs)

  • The maximum junction temperature that the STL24N60M2 can withstand is 150°C. However, it's recommended to keep the junction temperature below 125°C for reliable operation.
  • To ensure the STL24N60M2 is properly driven, use a gate driver with a high current capability (>1A) and a low output impedance (<10 ohms). Also, ensure the gate-source voltage is within the recommended range (10-15V) and the gate resistance is minimized (<10 ohms).
  • To minimize parasitic inductance and capacitance, use a compact PCB layout with short, wide traces (<10mm) and a solid ground plane. Place the MOSFET close to the gate driver and use a Kelvin connection for the gate-source voltage. Avoid using vias or narrow traces near the MOSFET.
  • Use a voltage clamp or a zener diode to protect the STL24N60M2 from overvoltage conditions. For overcurrent protection, use a current sense resistor and a comparator to detect excessive current. Implement a shutdown or current limiting circuit to prevent damage to the MOSFET.
  • Use a heat sink with a thermal resistance of <1°C/W and apply a thermal interface material (TIM) with a thermal conductivity of >5 W/m-K. Ensure good airflow (>10 L/min) and keep the ambient temperature below 50°C. Consider using a thermal pad or a thermal interface material with a high thermal conductivity.

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STL24N60M2 Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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