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STL325N4LF8AG - STMicroelectronics

Description: Automotive N‑channel enhancement mode logic level 40 V, 0.75 mΩ max., 373 A STripFET F8 Power MOSFET in a PowerFLAT 5x6

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STL325N4LF8AG - STMicroelectronics PCB footprint - Other - Other - PowerFLAT™ 5x6
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STL325N4LF8AG - STMicroelectronics  - 3D model - Other - PowerFLAT™ 5x6
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STL325N4LF8AG Details

  • Manufacturer Part Number:

    STL325N4LF8AG

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    26 Weeks

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    9

  • Additional Feature:

    BULK: 3000

  • Avalanche Energy Rating (Eas):

    590 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    373 A

  • Drain-source On Resistance-Max:

    1.1 Ω

  • FET Technology:

    SPLIT GATE TRENCH MOSFET

  • Feedback Cap-Max (Crss):

    50 pF

  • JESD-30 Code:

    R-PDSO-F8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    188 W

  • Pulsed Drain Current-Max (IDM):

    1492 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

STL325N4LF8AG Frequently Asked Questions (FAQs)

  • STMicroelectronics recommends a 2-layer or 4-layer PCB with a solid ground plane and a thermal relief pattern under the device to ensure optimal thermal performance.
  • To ensure reliable operation at high temperatures, it is recommended to follow the recommended operating conditions, use a heat sink if necessary, and ensure good thermal conductivity between the device and the heat sink.
  • To prevent ESD damage, handle the device in an ESD-protected environment, use ESD-protected tools and equipment, and ensure that the device is properly grounded during handling and assembly.
  • The optimal gate resistor value depends on the specific application and requirements. A general guideline is to use a value between 1 kΩ and 10 kΩ, but it's recommended to consult the application note and perform simulations to determine the optimal value for your specific use case.
  • The recommended soldering conditions for the STL325N4LF8AG are a peak temperature of 260°C, a soldering time of 10-30 seconds, and a soldering method that follows the IPC J-STD-020 standard.

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STL325N4LF8AG Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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