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STL36N60M6 - STMicroelectronics

Description: N-channel 600 V, 91 mΩ typ., 25 A MDmesh™ M6 Power MOSFET in a PowerFLAT™ 8x8 HV package

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STL36N60M6 Details

  • Manufacturer Part Number:

    STL36N60M6

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    14 Weeks

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    5

  • Additional Feature:

    BULK: 3000

  • Avalanche Energy Rating (Eas):

    750 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    25 A

  • Drain-source On Resistance-Max:

    0.11 Ω

  • FET Technology:

    SUPERJUNCTION MOSFET

  • Feedback Cap-Max (Crss):

    6 pF

  • JESD-30 Code:

    S-PSSO-N4

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    3

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    160 W

  • Pulsed Drain Current-Max (IDM):

    100 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

STL36N60M6 Frequently Asked Questions (FAQs)

  • The maximum junction temperature (Tj) of the STL36N60M6 is 175°C, as specified in the datasheet. However, it's recommended to keep the junction temperature below 150°C for reliable operation and to prevent thermal runaway.
  • To calculate the power dissipation of the STL36N60M6, you need to consider the voltage drop across the device, the current flowing through it, and the thermal resistance (Rth) from junction to ambient (Rth(j-a)). The power dissipation (Pd) can be calculated using the formula: Pd = (Vds * Ids) + (Rth(j-a) * Tj), where Vds is the drain-source voltage, Ids is the drain-source current, and Tj is the junction temperature.
  • The recommended gate drive voltage for the STL36N60M6 is between 10V and 15V, with a maximum gate-source voltage (Vgs) of 20V. A higher gate drive voltage can improve switching performance, but it also increases the risk of gate oxide damage.
  • Yes, the STL36N60M6 is suitable for high-frequency switching applications up to 100 kHz. However, you need to consider the device's switching losses, which can be significant at high frequencies. You may need to use a gate driver with a high current capability and a low inductance layout to minimize switching losses.
  • To ensure the reliability of the STL36N60M6 in a high-temperature environment, you should follow proper thermal management practices, such as using a heat sink, ensuring good airflow, and minimizing thermal resistance. You should also consider derating the device's power handling capability at high temperatures and using a thermal protection circuit to prevent overheating.

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STL36N60M6 Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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