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STP12NK60Z - STMicroelectronics

Description: MOSFET N-CH 600V 10A TO220AB

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STP12NK60Z - STMicroelectronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220 type A
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STP12NK60Z - STMicroelectronics  - 3D model - Transistor Outline, Vertical - TO-220 type A
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STP12NK60Z Details

  • Manufacturer Part Number:

    STP12NK60Z

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-220AB

  • Package Description:

    TO-220, 3 PIN

  • Pin Count:

    3

  • ECCN Code:

    EAR99

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    0

  • Additional Feature:

    AVALANCHE RATED, HIGH RELIABILITY

  • Avalanche Energy Rating (Eas):

    260 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    10 A

  • Drain-source On Resistance-Max:

    0.64 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    150 W

  • Pulsed Drain Current-Max (IDM):

    40 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

STP12NK60Z Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the STP12NK60Z is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal characteristics and voltage ratings. As a general rule, it's recommended to operate the device within the specified voltage and current ratings to ensure safe operation.
  • The junction-to-case thermal resistance (RthJC) for the STP12NK60Z can be calculated using the formula: RthJC = (TJ - TC) / P, where TJ is the junction temperature, TC is the case temperature, and P is the power dissipation. The datasheet provides the thermal resistance values for the device, which can be used to estimate the RthJC.
  • The recommended PCB layout and thermal management for the STP12NK60Z involve using a thermal pad or heat sink to dissipate heat, keeping the device away from other heat sources, and using thermal vias to connect the thermal pad to the PCB ground plane. A good thermal design should aim to keep the junction temperature below 150°C to ensure reliable operation.
  • Yes, the STP12NK60Z is suitable for high-frequency switching applications due to its low gate charge and fast switching times. However, it's essential to consider the device's parasitic capacitances, gate drive requirements, and layout considerations to minimize ringing and ensure reliable operation.
  • When selecting a gate driver for the STP12NK60Z, consider the device's gate charge, voltage rating, and switching frequency requirements. A gate driver with a high current capability, low output impedance, and fast rise/fall times is recommended. Additionally, ensure the gate driver is compatible with the device's logic level and can provide the required voltage swing.

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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