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STP25N10F7 - STMicroelectronics

Description: STMICROELECTRONICS - STP25N10F7 - MOSFET Transistor, N Channel, 25 A, 100 V, 0.027 ohm, 10 V, 4.5 V

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STP25N10F7 - STMicroelectronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - 3-Pin TO-220
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3D Models
STP25N10F7 - STMicroelectronics  - 3D model - Transistor Outline, Vertical - 3-Pin TO-220
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STP25N10F7 Details

  • Manufacturer Part Number:

    STP25N10F7

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    TO-220, 3 PIN

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    100 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    25 A

  • Drain-source On Resistance-Max:

    0.035 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    19 pF

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    50 W

  • Pulsed Drain Current-Max (IDM):

    100 A

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

STP25N10F7 Frequently Asked Questions (FAQs)

  • The maximum operating frequency of the STP25N10F7 is 100 MHz.
  • To ensure proper biasing, connect the gate to a voltage source through a resistor (e.g., 1 kΩ) and add a capacitor (e.g., 100 nF) between the gate and source to filter out noise.
  • The maximum power dissipation of the STP25N10F7 is 150 W, but this can be increased to 200 W with proper heat sinking.
  • Use a voltage regulator to limit the voltage to the recommended maximum of 100 V, and add a current limiter or fuse to prevent overcurrent conditions.
  • The thermal resistance (Rth) of the STP25N10F7 is 0.5°C/W (junction-to-case) and 10°C/W (junction-to-ambient).

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STP25N10F7 Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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