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STP25N80K5 - STMicroelectronics

Description: N-channel 800 V, 190 mΩ typ., 19.5 A MDmesh K5 Power MOSFET in a D²PAK, TO-220FP, TO-220 and TO-247 packages

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STP25N80K5 - STMicroelectronics - PCB symbol
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PCB Footprints
STP25N80K5 - STMicroelectronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - 3-Pin TO-220
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3D Models
STP25N80K5 - STMicroelectronics - 3D model - Transistor Outline, Vertical - 3-Pin TO-220
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STP25N80K5 Details

  • Manufacturer Part Number:

    STP25N80K5

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    TO-220, 3 PIN

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    14 Weeks

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    4

  • Avalanche Energy Rating (Eas):

    200 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    800 V

  • Drain Current-Max (ID):

    19.5 A

  • Drain-source On Resistance-Max:

    0.26 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    10 pF

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    250 W

  • Pulsed Drain Current-Max (IDM):

    78 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

STP25N80K5 Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the STP25N80K5 is typically defined by the manufacturer as the region where the device can operate safely without damage. This information is usually provided in the datasheet or application notes. For the STP25N80K5, the SOA is typically defined as Vds = 500V, Id = 25A, and Pd = 250W.
  • To ensure proper cooling of the STP25N80K5, it is recommended to use a heat sink with a thermal resistance of less than 1°C/W. The heat sink should be attached to the device using a thermal interface material (TIM) with a thermal conductivity of at least 5 W/m-K. Additionally, ensure good airflow around the heat sink to dissipate heat efficiently.
  • The recommended gate drive voltage for the STP25N80K5 is typically between 10V to 15V. However, it's essential to check the datasheet or consult with the manufacturer for specific recommendations, as excessive gate voltage can damage the device.
  • Yes, the STP25N80K5 can be used in a parallel configuration to increase the overall current handling capability. However, it's crucial to ensure that the devices are properly matched, and the gate drive signals are synchronized to prevent uneven current sharing and potential damage.
  • The maximum allowed dv/dt for the STP25N80K5 is typically around 10kV/μs. Exceeding this value can cause the device to malfunction or fail. It's essential to ensure that the device is operated within the recommended dv/dt range to ensure reliable operation.

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STP25N80K5 Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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