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STP33N60DM6 - STMicroelectronics

Description: N-channel 600 V, 115 mΩ typ., 25 A, MDmesh™ DM6 Power MOSFET in a TO‑220 package

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STP33N60DM6 - STMicroelectronics - PCB symbol
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STP33N60DM6 - STMicroelectronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220 type A
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STP33N60DM6 - STMicroelectronics - 3D model - Transistor Outline, Vertical - TO-220 type A
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STP33N60DM6 Details

  • Manufacturer Part Number:

    STP33N60DM6

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    TO-220, 3 PIN

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    14 Weeks

  • Date Of Intro:

    2019-02-01

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    360 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    25 A

  • Drain-source On Resistance-Max:

    0.128 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    3 pF

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    190 W

  • Pulsed Drain Current-Max (IDM):

    80 A

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

STP33N60DM6 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the STP33N60DM6 is -40°C to 150°C, as specified in the datasheet. However, it's recommended to derate the power dissipation above 125°C to ensure reliable operation.
  • The thermal resistance of the STP33N60DM6 can be calculated using the junction-to-case thermal resistance (RthJC) and the case-to-ambient thermal resistance (RthCA). The RthJC is specified in the datasheet as 0.5°C/W, and the RthCA depends on the specific heat sink and cooling system used. You can use the following formula: RthJA = RthJC + RthCA.
  • The recommended gate drive voltage for the STP33N60DM6 is between 10V and 15V, as specified in the datasheet. However, it's recommended to use a gate drive voltage of 12V to ensure reliable switching and minimize power losses.
  • Yes, the STP33N60DM6 can be used in a parallel configuration to increase the current handling capability. However, it's essential to ensure that the devices are properly matched and that the gate drive signals are synchronized to prevent uneven current sharing and oscillations.
  • To protect the STP33N60DM6 from overvoltage and overcurrent, you can use a combination of voltage regulators, overvoltage protection (OVP) circuits, and current sense resistors. Additionally, you can implement overcurrent protection (OCP) and short-circuit protection (SCP) using external components or ICs.

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STP33N60DM6 Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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