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STP33N60M2 - STMicroelectronics

Description: N-channel 600 V, 0.108 Ω typ., 26 A, MDmesh M2 Power MOSFETs in TO‑220FP, I2PAK, TO-220 and TO-247 packages

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STP33N60M2 - STMicroelectronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220 type A
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STP33N60M2 - STMicroelectronics  - 3D model - Transistor Outline, Vertical - TO-220 type A
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STP33N60M2 Details

  • Manufacturer Part Number:

    STP33N60M2

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    TO-220, 3 PIN

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    14 Weeks

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    450 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    26 A

  • Drain-source On Resistance-Max:

    0.125 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    2.5 pF

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e4

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -50 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    190 W

  • Pulsed Drain Current-Max (IDM):

    104 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Nickel/Palladium/Gold (Ni/Pd/Au)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

STP33N60M2 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the STP33N60M2 is -55°C to 150°C.
  • To ensure proper biasing, the gate-source voltage (Vgs) should be between 2V and 10V, and the drain-source voltage (Vds) should be between 0V and 560V.
  • The recommended gate resistor value for the STP33N60M2 is between 1kΩ and 10kΩ, depending on the specific application and switching frequency.
  • To protect the STP33N60M2 from overvoltage and overcurrent, use a voltage regulator or a voltage clamp to limit the voltage, and consider adding overcurrent protection devices such as fuses or current sensors.
  • The maximum allowable power dissipation for the STP33N60M2 is 150W, but this value can be affected by the thermal resistance of the package and the ambient temperature.

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STP33N60M2 Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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