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STP34NM60ND - STMicroelectronics

Description: N-channel 600 V, 0.097 Ω typ., 29 A FDmesh™ II Power MOSFET (with fast diode) in D²PAK, TO-220FP, TO-220 and TO-247

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STP34NM60ND - STMicroelectronics - PCB symbol
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PCB Footprints
STP34NM60ND - STMicroelectronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220 type A
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STP34NM60ND - STMicroelectronics - 3D model - Transistor Outline, Vertical - TO-220 type A
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STP34NM60ND Details

  • Manufacturer Part Number:

    STP34NM60ND

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    End Of Life

  • Part Package Code:

    TO-220AB

  • Pin Count:

    3

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    14 Weeks

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    0

  • Additional Feature:

    ULTRA-LOW RESISTANCE

  • Avalanche Energy Rating (Eas):

    345 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    29 A

  • Drain-source On Resistance-Max:

    0.11 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    210 W

  • Pulsed Drain Current-Max (IDM):

    116 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

STP34NM60ND Frequently Asked Questions (FAQs)

  • The maximum SOA for the STP34NM60ND is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal resistance and maximum junction temperature. As a general rule, it's recommended to keep the device within the SOA to prevent thermal runaway and ensure reliable operation.
  • To minimize switching losses, ensure that the gate drive voltage is sufficient (typically 10-15V) and the gate resistance is low (typically <10 ohms). Also, consider using a gate driver IC or a dedicated gate drive circuit to provide a fast rise and fall time for the gate voltage.
  • For optimal thermal performance, use a PCB with a solid copper ground plane and a thermal relief pattern under the device. Ensure good thermal conductivity between the device and the heat sink or PCB. Use thermal interface material (TIM) and a heat sink with a thermal resistance of <1°C/W to keep the junction temperature below 150°C.
  • Use a voltage clamp or a transient voltage suppressor (TVS) to protect the device from overvoltage. Implement overcurrent protection using a current sense resistor and a comparator or a dedicated overcurrent protection IC. Consider using a fuse or a polyfuse to protect against excessive current.
  • Operate the device within the recommended conditions: Vds ≤ 60V, Id ≤ 34A, and Tj ≤ 150°C. Ensure the device is not exposed to excessive voltage, current, or temperature, and avoid operating the device in avalanche or breakdown regions.

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STP34NM60ND Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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