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STP45N65M5 - STMicroelectronics

Description: N‑channel 650 V, 67 mΩ typ., 35 A MDmesh M5 Power MOSFETs in a D²PAK, TO-220FP and TO-220 packages

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STP45N65M5 - STMicroelectronics - PCB symbol
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PCB Footprints
STP45N65M5 - STMicroelectronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220_11
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3D Models
STP45N65M5 - STMicroelectronics - 3D model - Transistor Outline, Vertical - TO-220_11
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STP45N65M5 Details

  • Manufacturer Part Number:

    STP45N65M5

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    14 Weeks

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    5

  • Additional Feature:

    ULTRA LOW RESISTANCE

  • Avalanche Energy Rating (Eas):

    810 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    650 V

  • Drain Current-Max (ID):

    35 A

  • Drain-source On Resistance-Max:

    0.078 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    210 W

  • Pulsed Drain Current-Max (IDM):

    140 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

STP45N65M5 Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the STP45N65M5 is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal resistance and maximum junction temperature. A safe operating area can be estimated to be around 10A/50V.
  • To ensure proper thermal management, it is recommended to attach a heat sink to the device, and to ensure good thermal contact between the device and the heat sink. The heat sink should be designed to keep the junction temperature below 150°C.
  • The recommended gate resistor value for the STP45N65M5 is typically in the range of 10Ω to 100Ω, depending on the specific application and switching frequency. A higher gate resistor value can help reduce electromagnetic interference (EMI) but may increase switching losses.
  • Yes, the STP45N65M5 is a high-reliability device that is suitable for use in high-reliability applications. It is manufactured using a robust process and is designed to meet the requirements of automotive and industrial applications.
  • To protect the STP45N65M5 from electrostatic discharge (ESD), it is recommended to handle the device in an ESD-protected environment, use ESD-protective packaging, and ensure that all equipment and tools are properly grounded.

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STP45N65M5 Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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