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STP4N90K5 - STMicroelectronics

Description: MOSFET N-channel 900 V, 1.90 Ohm typ., 3 A MDmesh K5 Power MOSFET in a TO-220 package

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STP4N90K5 - STMicroelectronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - 3-Pin TO-220
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3D Models
STP4N90K5 - STMicroelectronics  - 3D model - Transistor Outline, Vertical - 3-Pin TO-220
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STP4N90K5 Details

  • Manufacturer Part Number:

    STP4N90K5

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Manufacturer Package Code:

    TO-220AB

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    14 Weeks

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    160 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    900 V

  • Drain Current-Max (ID):

    3 A

  • Drain-source On Resistance-Max:

    2.1 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    1 pF

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    60 W

  • Pulsed Drain Current-Max (IDM):

    12 A

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

STP4N90K5 Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the STP4N90K5 is typically defined by the voltage and current ratings. The device can operate safely within the boundaries of Vds = 900V, Id = 4A, and Pd = 100W. However, it's essential to consult the datasheet and application notes for specific guidance on SOA and thermal management.
  • To ensure proper biasing, follow the recommended operating conditions outlined in the datasheet. Typically, this includes setting the gate-source voltage (Vgs) between 2V and 10V, and ensuring the drain-source voltage (Vds) is within the recommended range. Additionally, consider using a gate driver or voltage regulator to maintain a stable bias voltage.
  • Thermal management is crucial for the STP4N90K5. Ensure the device is mounted on a suitable heat sink, and consider using thermal interface materials to minimize thermal resistance. The maximum junction temperature (Tj) is 150°C, and the device should be operated within the recommended temperature range to prevent thermal runaway.
  • Yes, the STP4N90K5 is suitable for high-frequency switching applications. However, it's essential to consider the device's switching characteristics, such as the rise and fall times, and ensure the gate driver is capable of providing a fast switching signal. Additionally, consider the effects of parasitic inductance and capacitance on the device's performance.
  • To protect the STP4N90K5 from overvoltage and overcurrent conditions, consider using voltage clamping devices, such as zener diodes or transient voltage suppressors, and current limiting resistors or fuses. Additionally, implement overcurrent protection circuits, such as a current sense resistor and a comparator, to detect and respond to overcurrent conditions.

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STP4N90K5 Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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