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STP5N80K5 - STMicroelectronics

Description: ndustry’s lowest RDS(on) x area  Industry’s best FoM (figure of merit)  Ultra-low gate charge  100% avalanche tested  Zener-protected

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STP5N80K5 - STMicroelectronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220
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STP5N80K5 - STMicroelectronics  - 3D model - Transistor Outline, Vertical - TO-220
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STP5N80K5 Details

  • Manufacturer Part Number:

    STP5N80K5

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Manufacturer Package Code:

    TO-220AB

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    14 Weeks

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    165 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    800 V

  • Drain Current-Max (ID):

    4 A

  • Drain-source On Resistance-Max:

    1.75 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    0.3 pF

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    60 W

  • Pulsed Drain Current-Max (IDM):

    16 A

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

STP5N80K5 Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) of the STP5N80K5 is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal resistance and maximum junction temperature. A safe operating area can be estimated to be around 10A/500V.
  • To ensure proper cooling, consider the device's thermal resistance (Rth(j-a) = 40°C/W) and maximum junction temperature (Tj = 150°C). Use a heat sink with a thermal resistance of around 10°C/W or less, and ensure good thermal contact between the device and heat sink.
  • The recommended gate resistor value for the STP5N80K5 is not explicitly stated in the datasheet. However, a typical value for a MOSFET like this is around 10-20 ohms. The optimal value will depend on the specific application and switching frequency.
  • Yes, the STP5N80K5 is suitable for high-frequency switching applications due to its low gate charge (Qg = 44 nC) and low output capacitance (Coss = 220 pF). However, ensure that the device is properly cooled and the switching frequency is within the recommended range.
  • To protect the STP5N80K5 from overvoltage and overcurrent, consider using a voltage clamp or transient voltage suppressor (TVS) to limit voltage spikes, and a current sense resistor or fuse to detect and respond to overcurrent conditions.

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STP5N80K5 Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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