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STP5NK60Z - STMicroelectronics

Description: N-channel 600 V, 1.2 Ω typ., 5 A SuperMESH Power MOSFET in a TO-220 package

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STP5NK60Z - STMicroelectronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - ----TO-220 type A package information-
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STP5NK60Z - STMicroelectronics  - 3D model - Transistor Outline, Vertical - ----TO-220 type A package information-
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STP5NK60Z Details

  • Manufacturer Part Number:

    STP5NK60Z

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-220AB

  • Pin Count:

    3

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    13 Weeks

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    5.8

  • Avalanche Energy Rating (Eas):

    220 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    5 A

  • Drain-source On Resistance-Max:

    1.6 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    90 W

  • Pulsed Drain Current-Max (IDM):

    20 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

STP5NK60Z Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the STP5NK60Z is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal resistance and maximum junction temperature. A general rule of thumb is to limit the device's power dissipation to 50-70% of its maximum rating to ensure reliable operation.
  • To minimize switching losses, ensure that the gate drive voltage is sufficient (typically 10-15V) and the gate resistance is minimized (e.g., using a low-ESR capacitor). Additionally, consider using a gate driver IC or a dedicated MOSFET driver to provide a high-current, fast-rise-time signal to the gate.
  • For optimal thermal performance, ensure that the PCB has a solid copper ground plane and a thermal relief pattern under the device. Use a thermal interface material (TIM) between the device and the heat sink, and ensure good airflow around the device. A heat sink with a thermal resistance of 1-2°C/W is recommended.
  • Yes, the STP5NK60Z is suitable for high-frequency switching applications up to several hundred kHz. However, be aware of the device's switching losses, which increase with frequency. Ensure that the device is properly driven and that the PCB layout is optimized for high-frequency operation.
  • Use a voltage clamp or a transient voltage suppressor (TVS) to protect the device from overvoltage conditions. For overcurrent protection, consider using a current sense resistor and a comparator or a dedicated overcurrent protection IC. Additionally, ensure that the device is properly heatsinked and that the thermal management is adequate.

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STP5NK60Z Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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