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STP8N120K5 - STMicroelectronics

Description: MOSFET N-channel 1200 V, 1.65 Ohm typ., 6 A MDmesh K5 Power MOSFET in a TO-220 package

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STP8N120K5 - STMicroelectronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - 3-Pin TO-220AB
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STP8N120K5 - STMicroelectronics  - 3D model - Transistor Outline, Vertical - 3-Pin TO-220AB
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STP8N120K5 Details

  • Manufacturer Part Number:

    STP8N120K5

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    TO-220, 3 PIN

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    14 Weeks

  • Date Of Intro:

    2018-05-31

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    5

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    415 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    1200 V

  • Drain Current-Max (ID):

    6 A

  • Drain-source On Resistance-Max:

    2 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    0.4 pF

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    130 W

  • Pulsed Drain Current-Max (IDM):

    12 A

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

STP8N120K5 Frequently Asked Questions (FAQs)

  • The maximum operating frequency of the STP8N120K5 is 100 kHz, but it can be operated at higher frequencies with reduced performance.
  • To ensure proper biasing, the gate-source voltage (Vgs) should be between 2V and 5V, and the drain-source voltage (Vds) should be between 10V and 120V. Additionally, a gate resistor (Rg) should be used to limit the gate current.
  • The maximum power dissipation of the STP8N120K5 is 150W, but this can be increased with proper heat sinking and thermal management.
  • To protect the STP8N120K5 from overvoltage and overcurrent, use a voltage regulator to limit the voltage, and a current limiter or fuse to limit the current. Additionally, consider using a transient voltage suppressor (TVS) to protect against voltage spikes.
  • The safe operating area (SOA) of the STP8N120K5 is defined by the maximum drain-source voltage (Vds) and drain current (Id). The SOA is typically defined by the manufacturer's datasheet and should be consulted for specific operating conditions.

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STP8N120K5 Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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