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STP8NM50N - STMicroelectronics

Description: N-channel 500 V, 0.73 Ω typ., 5 A, MDmesh™ II Power MOSFETs in DPAK and TO-220 packages

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STP8NM50N - STMicroelectronics - PCB symbol
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STP8NM50N - STMicroelectronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - STP8NM50N
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STP8NM50N - STMicroelectronics - 3D model - Transistor Outline, Vertical - STP8NM50N
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STP8NM50N Details

  • Manufacturer Part Number:

    STP8NM50N

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-220AB

  • Package Description:

    TO-220, 3 PIN

  • Pin Count:

    3

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    14 Weeks

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    5.9

  • Avalanche Energy Rating (Eas):

    140 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    500 V

  • Drain Current-Max (ID):

    5 A

  • Drain-source On Resistance-Max:

    0.79 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    45 W

  • Pulsed Drain Current-Max (IDM):

    20 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn) - immersion

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

STP8NM50N Frequently Asked Questions (FAQs)

  • The maximum operating frequency of the STP8NM50N is 100 kHz, but it can be operated at higher frequencies with reduced performance.
  • To ensure proper biasing, connect the gate to a voltage source through a resistor (e.g., 1 kΩ) and add a pull-down resistor (e.g., 10 kΩ) from the gate to ground. This helps to prevent unwanted turn-on and ensures stable operation.
  • The recommended gate drive voltage for the STP8NM50N is between 10 V and 15 V, with a maximum of 20 V. This ensures reliable switching and minimizes power losses.
  • To protect the STP8NM50N, use a voltage clamp or a transient voltage suppressor (TVS) to limit voltage spikes, and consider adding a current sense resistor and a fuse or a current limiter to prevent overcurrent conditions.
  • The thermal resistance of the STP8NM50N is 2.5°C/W (junction-to-case). To ensure proper heat sinking, use a heat sink with a thermal resistance of 1°C/W or lower, and apply a thermal interface material (TIM) to minimize thermal resistance.

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STP8NM50N Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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