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STPSC20G12WL - STMicroelectronics

Description: 1200 V, 20 A power Schottky high surge silicon carbide diode

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PCB Footprints
STPSC20G12WL - STMicroelectronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - DO-247 LL_2023
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3D Models
STPSC20G12WL - STMicroelectronics  - 3D model - Transistor Outline, Vertical - DO-247 LL_2023
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STPSC20G12WL Details

  • Manufacturer Part Number:

    STPSC20G12WL

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    DO-247LL

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.80

  • Factory Lead Time:

    25 Weeks

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    6

  • Application:

    HIGH VOLTAGE POWER

  • Configuration:

    SINGLE

  • Diode Element Material:

    SILICON CARBIDE

  • Diode Type:

    RECTIFIER DIODE

  • Forward Voltage-Max (VF):

    1.5 V

  • JEDEC-95 Code:

    DO-247

  • JESD-30 Code:

    R-PSFM-T2

  • Non-rep Pk Forward Current-Max:

    180 A

  • Number of Elements:

    1

  • Number of Phases:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Output Current-Max:

    20 A

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Rep Pk Reverse Voltage-Max:

    1200 V

  • Reverse Current-Max:

    150 µA

  • Reverse Test Voltage:

    1200 V

  • Surface Mount:

    NO

  • Technology:

    SCHOTTKY

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

STPSC20G12WL Frequently Asked Questions (FAQs)

  • STMicroelectronics provides a recommended PCB layout in the application note AN5042, which includes guidelines for thermal pad connection, copper pour, and via placement to ensure optimal thermal performance.
  • You can calculate the maximum power dissipation using the formula: Pd = (TJ(max) - TA) / Rth(j-a), where TJ(max) is the maximum junction temperature, TA is the ambient temperature, and Rth(j-a) is the thermal resistance from junction to ambient. Refer to the datasheet for the specific values.
  • The recommended gate drive voltage for the STPSC20G12WL is between 10V to 15V. This ensures optimal switching performance, low switching losses, and reliable operation.
  • You can protect the device by using a suitable overvoltage protection (OVP) circuit and overcurrent protection (OCP) circuit. STMicroelectronics recommends using a voltage clamp or a zener diode for OVP and a current sense resistor with a comparator for OCP.
  • The recommended dead time for the STPSC20G12WL is typically around 100ns to 200ns, depending on the specific application and switching frequency. This ensures that the device is not damaged due to shoot-through currents.

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STPSC20G12WL Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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