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STRH100N10HY1 - STMicroelectronics

Description: Rad-Hard 100 V, 48 A N-channel Power MOSFET

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STRH100N10HY1 - STMicroelectronics - PCB symbol
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STRH100N10HY1 - STMicroelectronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-254AA package mechanical data
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STRH100N10HY1 - STMicroelectronics - 3D model - Transistor Outline, Vertical - TO-254AA package mechanical data
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STRH100N10HY1 Details

  • Manufacturer Part Number:

    STRH100N10HY1

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    France

  • ECCN Code:

    EAR99

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    5.3

  • Avalanche Energy Rating (Eas):

    954 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    48 A

  • Drain-source On Resistance-Max:

    0.035 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    284 pF

  • JEDEC-95 Code:

    TO-254AA

  • JESD-30 Code:

    S-MSFM-P3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    METAL

  • Package Shape:

    SQUARE

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    170 W

  • Pulsed Drain Current-Max (IDM):

    192 A

  • Surface Mount:

    NO

  • Terminal Form:

    PIN/PEG

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    169.4 ns

  • Turn-on Time-Max (ton):

    87 ns

STRH100N10HY1 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the STRH100N10HY1 is -40°C to 150°C, as specified in the datasheet. However, it's recommended to operate within the -40°C to 125°C range for optimal performance and reliability.
  • To ensure proper cooling, it's essential to provide a sufficient heat sink and thermal interface material (TIM) between the device and the heat sink. The recommended thermal resistance (Rth) is ≤ 1.5 K/W. Additionally, ensure good airflow around the device and avoid blocking the heat sink fins.
  • The recommended gate drive voltage for the STRH100N10HY1 is between 10 V and 15 V, with a maximum voltage of 20 V. However, it's essential to ensure the gate drive voltage is within the specified range to prevent damage to the device.
  • Yes, the STRH100N10HY1 is suitable for high-frequency applications up to 100 kHz. However, it's crucial to consider the device's switching characteristics, gate drive requirements, and thermal management to ensure reliable operation at high frequencies.
  • To protect the STRH100N10HY1 from overvoltage and overcurrent, it's recommended to use a suitable voltage regulator, overvoltage protection (OVP) circuit, and overcurrent protection (OCP) circuit. Additionally, ensure the device is operated within the specified voltage and current ratings.

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STRH100N10HY1 Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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