STRH100N10HYG - STMicroelectronics

STRH100N10HYG Details

• Manufacturer Part Number:

  STRH100N10HYG

• Brand Name:

  STMicroelectronics

• Rohs Code:

  Yes

• Part Life Cycle Code:

  Active

• Country Of Origin:

  France

• ECCN Code:

  EAR99

• Manufacturer:

  STMicroelectronics

• YTEOL:

  5.3

• Avalanche Energy Rating (Eas):

  954 mJ

• Configuration:

  SINGLE WITH BUILT-IN DIODE

• DS Breakdown Voltage-Min:

  100 V

• Drain Current-Max (ID):

  48 A

• Drain-source On Resistance-Max:

  0.035 Ω

• FET Technology:

  METAL-OXIDE SEMICONDUCTOR

• Feedback Cap-Max (Crss):

  284 pF

• JEDEC-95 Code:

  TO-254AA

• JESD-30 Code:

  S-MSFM-P3

• Number of Elements:

  1

• Number of Terminals:

  3

• Operating Mode:

  ENHANCEMENT MODE

• Operating Temperature-Max:

  150 °C

• Operating Temperature-Min:

  -55 °C

• Package Body Material:

  METAL

• Package Shape:

  SQUARE

• Package Style:

  FLANGE MOUNT

• Peak Reflow Temperature (Cel):

  NOT SPECIFIED

• Polarity/Channel Type:

  N-CHANNEL

• Power Dissipation-Max (Abs):

  170 W

• Pulsed Drain Current-Max (IDM):

  192 A

• Reference Standard:

  EUROPEAN SPACE AGENCY; RH - 50K Rad(Si)

• Surface Mount:

  NO

• Terminal Form:

  PIN/PEG

• Terminal Position:

  SINGLE

• Time@Peak Reflow Temperature-Max (s):

  NOT SPECIFIED

• Transistor Application:

  SWITCHING

• Transistor Element Material:

  SILICON

• Turn-off Time-Max (toff):

  169.4 ns

• Turn-on Time-Max (ton):

  87 ns