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STRH100N6HYT - STMicroelectronics

Description: Rad-Hard 60 V, 40 A, N-channel Power MOSFET

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STRH100N6HYT Details

  • Manufacturer Part Number:

    STRH100N6HYT

  • Brand Name:

    STMicroelectronics

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    France

  • ECCN Code:

    EAR99

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    5.15

  • Additional Feature:

    FAST SWITCHING

  • Avalanche Energy Rating (Eas):

    954 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    40 A

  • Drain-source On Resistance-Max:

    0.024 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    470 pF

  • JEDEC-95 Code:

    TO-254AA

  • JESD-30 Code:

    S-MSFM-P3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    METAL

  • Package Shape:

    SQUARE

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    176 W

  • Pulsed Drain Current-Max (IDM):

    320 A

  • Reference Standard:

    EUROPEAN SPACE AGENCY; RH - 50K Rad(Si)

  • Surface Mount:

    NO

  • Terminal Form:

    PIN/PEG

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    280 ns

  • Turn-on Time-Max (ton):

    300 ns

STRH100N6HYT Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the STRH100N6HYT is -40°C to 150°C, but it's recommended to operate within -40°C to 125°C for optimal performance and reliability.
  • To ensure proper cooling, provide a heat sink with a thermal resistance of less than 10°C/W, and ensure good airflow around the device. You can also use thermal interface materials to improve heat transfer.
  • For optimal performance, use a 4-layer PCB with a solid ground plane, and keep the high-frequency traces short and away from the power supply lines. Also, use a decoupling capacitor (e.g., 100nF) close to the device's power pins.
  • Use a voltage regulator or a voltage limiter to prevent overvoltage, and add a current limiter or a fuse to prevent overcurrent. You can also use a TVS (Transient Voltage Suppressor) diode to protect against voltage spikes.
  • The recommended gate drive voltage for the STRH100N6HYT is between 10V and 15V, with a maximum gate-source voltage of 20V. However, it's recommended to consult the datasheet and application notes for specific gate drive requirements.

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STRH100N6HYT Overview

Use the download button to access the STRH100N6HYT schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like STRH1, or try a keyword search, such as Power Field-Effect Transistors

About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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