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STRH12P10GY1 - STMicroelectronics

Description: Rad-Hard 100 V, 12 A, P-channel Power MOSFET

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STRH12P10GY1 - STMicroelectronics - PCB symbol
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PCB Footprints
STRH12P10GY1 - STMicroelectronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-257
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3D Models
STRH12P10GY1 - STMicroelectronics - 3D model - Transistor Outline, Vertical - TO-257
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STRH12P10GY1 Details

  • Manufacturer Part Number:

    STRH12P10GY1

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    France

  • ECCN Code:

    EAR99

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    5.05

  • Avalanche Energy Rating (Eas):

    112 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    12 A

  • Drain-source On Resistance-Max:

    0.3 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    85 pF

  • JEDEC-95 Code:

    TO-257AA

  • JESD-30 Code:

    R-XSFM-P3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    UNSPECIFIED

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    75 W

  • Pulsed Drain Current-Max (IDM):

    48 A

  • Surface Mount:

    NO

  • Terminal Form:

    PIN/PEG

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    60.5 ns

  • Turn-on Time-Max (ton):

    46 ns

STRH12P10GY1 Frequently Asked Questions (FAQs)

  • STMicroelectronics provides a recommended PCB layout in the application note AN4398, which includes guidelines for thermal vias, copper pours, and component placement to minimize thermal resistance and ensure reliable operation.
  • The input capacitor selection depends on the input voltage, output current, and ripple requirements. A general guideline is to use a low-ESR capacitor with a value between 1-10uF, and a voltage rating at least 1.5 times the maximum input voltage. Consult the datasheet and application notes for more specific guidance.
  • The maximum output current is dependent on the input voltage, ambient temperature, and PCB layout. While the datasheet specifies a maximum output current of 1A, it's essential to perform thermal calculations and consider derating factors to ensure reliable operation. Consult the datasheet and application notes for more information.
  • To ensure stability, follow the recommended PCB layout, use a suitable input capacitor, and add a 1-10nF ceramic capacitor between the output and ground pins. Additionally, ensure that the output voltage is within the specified range, and the input voltage is above the minimum required value.
  • The typical dropout voltage for the STRH12P10GY1 is around 1.2V, but it can vary depending on the input voltage, output current, and temperature. Consult the datasheet for more information on the dropout voltage characteristics.

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STRH12P10GY1 Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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