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STRH12P10GYG - STMicroelectronics

Description: Rad-Hard 100 V, 12 A, P-channel Power MOSFET

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STRH12P10GYG - STMicroelectronics - PCB symbol
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PCB Footprints
STRH12P10GYG - STMicroelectronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-257
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3D Models
STRH12P10GYG - STMicroelectronics - 3D model - Transistor Outline, Vertical - TO-257
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STRH12P10GYG Details

  • Manufacturer Part Number:

    STRH12P10GYG

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    France

  • ECCN Code:

    EAR99

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    5.05

  • Avalanche Energy Rating (Eas):

    112 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    12 A

  • Drain-source On Resistance-Max:

    0.3 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    85 pF

  • JEDEC-95 Code:

    TO-257AA

  • JESD-30 Code:

    R-XSFM-P3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    UNSPECIFIED

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    75 W

  • Pulsed Drain Current-Max (IDM):

    48 A

  • Reference Standard:

    EUROPEAN SPACE AGENCY; RH - 100K Rad(Si)

  • Surface Mount:

    NO

  • Terminal Form:

    PIN/PEG

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    60.5 ns

  • Turn-on Time-Max (ton):

    46 ns

STRH12P10GYG Frequently Asked Questions (FAQs)

  • STMicroelectronics provides a recommended PCB layout in the application note AN4398, which includes guidelines for thermal vias, copper pours, and component placement to minimize thermal resistance and ensure reliable operation.
  • The gate resistor value depends on the specific application, switching frequency, and gate drive voltage. A general guideline is to use a value between 1 ohm and 10 ohm. Consult the application note AN4398 and the datasheet for more information on gate resistor selection.
  • The maximum allowed voltage on the bootstrap pin (VB) during startup is typically limited to 6.5V to prevent damage to the internal bootstrap diode. Consult the datasheet and application notes for specific guidelines on startup sequencing and voltage limitations.
  • To ensure reliable operation at high temperatures, follow the recommended thermal design guidelines, use a suitable heat sink, and ensure good airflow around the device. Additionally, consider derating the device's power handling capabilities at high temperatures to prevent overheating.
  • The recommended dead time for the STRH12P10GYG is typically in the range of 100ns to 500ns, depending on the specific application and switching frequency. Consult the datasheet and application notes for more information on dead time selection.

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STRH12P10GYG Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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