STRH12P10GYT - STMicroelectronics

STRH12P10GYT Details

• Manufacturer Part Number:

  STRH12P10GYT

• Brand Name:

  STMicroelectronics

• Rohs Code:

  Yes

• Part Life Cycle Code:

  Active

• Country Of Origin:

  France

• ECCN Code:

  EAR99

• Manufacturer:

  STMicroelectronics

• YTEOL:

  5.05

• Avalanche Energy Rating (Eas):

  112 mJ

• Configuration:

  SINGLE WITH BUILT-IN DIODE

• DS Breakdown Voltage-Min:

  100 V

• Drain Current-Max (ID):

  12 A

• Drain-source On Resistance-Max:

  0.3 Ω

• FET Technology:

  METAL-OXIDE SEMICONDUCTOR

• Feedback Cap-Max (Crss):

  85 pF

• JEDEC-95 Code:

  TO-257AA

• JESD-30 Code:

  R-XSFM-P3

• Number of Elements:

  1

• Number of Terminals:

  3

• Operating Mode:

  ENHANCEMENT MODE

• Operating Temperature-Max:

  150 °C

• Package Body Material:

  UNSPECIFIED

• Package Shape:

  RECTANGULAR

• Package Style:

  FLANGE MOUNT

• Peak Reflow Temperature (Cel):

  NOT SPECIFIED

• Polarity/Channel Type:

  P-CHANNEL

• Power Dissipation-Max (Abs):

  75 W

• Pulsed Drain Current-Max (IDM):

  48 A

• Reference Standard:

  EUROPEAN SPACE AGENCY; RH - 100K Rad(Si)

• Surface Mount:

  NO

• Terminal Form:

  PIN/PEG

• Terminal Position:

  SINGLE

• Time@Peak Reflow Temperature-Max (s):

  NOT SPECIFIED

• Transistor Application:

  SWITCHING

• Transistor Element Material:

  SILICON

• Turn-off Time-Max (toff):

  60.5 ns

• Turn-on Time-Max (ton):

  46 ns