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STU2N80K5 - STMicroelectronics

Description: N-channel 800 V, 3.5 Ohm typ., 2 A MDmesh K5 Power MOSFET in an IPAK package

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STU2N80K5 - STMicroelectronics PCB footprint - Other - Other - STU2N80K5-1
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STU2N80K5 - STMicroelectronics  - 3D model - Other - STU2N80K5-1
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STU2N80K5 Details

  • Manufacturer Part Number:

    STU2N80K5

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    IPAK-3

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    14 Weeks

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    5

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    60.5 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    800 V

  • Drain Current-Max (ID):

    2 A

  • Drain-source On Resistance-Max:

    4.5 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    0.5 pF

  • JEDEC-95 Code:

    TO-251

  • JESD-30 Code:

    R-PSIP-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    IN-LINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    45 W

  • Pulsed Drain Current-Max (IDM):

    8 A

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

STU2N80K5 Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the STU2N80K5 is typically defined by the voltage and current ratings. The device can operate safely up to 800V and 2A, but it's recommended to check the SOA curves in the datasheet to ensure the device operates within the safe region.
  • To ensure the STU2N80K5 is properly biased, follow the recommended biasing scheme in the datasheet. Typically, this involves connecting the gate to a voltage source through a resistor, and ensuring the drain-source voltage is within the recommended range.
  • For optimal thermal performance, it's recommended to use a PCB layout that allows for good heat dissipation. This includes using a thermal pad, thermal vias, and a heat sink if necessary. The datasheet provides guidelines for PCB layout and thermal management.
  • To protect the STU2N80K5 from overvoltage and overcurrent, use a voltage regulator or a voltage clamp to limit the voltage, and a current limiter or a fuse to limit the current. Additionally, consider using a TVS diode or a zener diode for overvoltage protection.
  • The recommended gate drive circuit for the STU2N80K5 typically involves using a gate driver IC or a discrete transistor to drive the gate. The datasheet provides guidelines for gate drive circuit design, including the recommended gate resistance and capacitance values.

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STU2N80K5 Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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