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STU5N70M6-S - STMicroelectronics

Description: N-channel 700 V, 1.2 Ohm typ., 3.5 A MDmesh M6 Power MOSFET in a short IPAK package

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STU5N70M6-S - STMicroelectronics - PCB symbol
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STU5N70M6-S - STMicroelectronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - Short IPAK
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STU5N70M6-S - STMicroelectronics - 3D model - Transistor Outline, Vertical - Short IPAK
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STU5N70M6-S Details

  • Manufacturer Part Number:

    STU5N70M6-S

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    IPAK-3

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    77 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    700 V

  • Drain Current-Max (ID):

    3.5 A

  • Drain-source On Resistance-Max:

    1.4 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    1 pF

  • JESD-30 Code:

    R-PSIP-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    IN-LINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    45 W

  • Pulsed Drain Current-Max (IDM):

    8 A

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

STU5N70M6-S Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the STU5N70M6-S is not explicitly stated in the datasheet. However, according to STMicroelectronics' application notes, the device can operate safely within the boundaries of Vds = 700V, Id = 5A, and Pd = 150W. It's essential to ensure that the device operates within these limits to prevent damage or premature failure.
  • The junction-to-case thermal resistance (Rthjc) for the STU5N70M6-S is not directly provided in the datasheet. However, you can calculate it using the following formula: Rthjc = (Tj - Tc) / Pd, where Tj is the junction temperature, Tc is the case temperature, and Pd is the power dissipation. You can find the thermal resistance values in the datasheet's thermal characteristics table.
  • The recommended gate resistor value for the STU5N70M6-S is not explicitly stated in the datasheet. However, a general guideline is to use a gate resistor value between 1 kΩ to 10 kΩ to ensure proper switching and minimize ringing. The optimal value depends on the specific application, PCB layout, and switching frequency.
  • Yes, the STU5N70M6-S is suitable for high-frequency switching applications. It has a fast switching time (tr = 15 ns, tf = 20 ns) and a low gate charge (Qg = 15 nC). However, it's essential to ensure that the device is properly driven, and the PCB layout is optimized to minimize parasitic inductances and capacitances.
  • To protect the STU5N70M6-S from electrostatic discharge (ESD), follow proper handling and storage procedures. Use an anti-static wrist strap or mat, and ensure that the device is stored in an anti-static bag or container. During PCB assembly, use ESD-protective equipment and follow proper soldering techniques.

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STU5N70M6-S Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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