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STU6N65M2 - STMicroelectronics

Description: N-channel 650 V, 1.2 Ω typ., 4 A MDmesh™ M2 Power MOSFETs in TO-220FP, TO-220 and IPAK packages

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PCB Footprints
STU6N65M2 - STMicroelectronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - IPAK (TO-251)_2022
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3D Models
STU6N65M2 - STMicroelectronics  - 3D model - Transistor Outline, Vertical - IPAK (TO-251)_2022
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STU6N65M2 Details

  • Manufacturer Part Number:

    STU6N65M2

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    IPAK-3

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    14 Weeks

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    6.2

  • Avalanche Energy Rating (Eas):

    100 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    650 V

  • Drain Current-Max (ID):

    4 A

  • Drain-source On Resistance-Max:

    1.35 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    0.65 pF

  • JEDEC-95 Code:

    TO-251

  • JESD-30 Code:

    R-PSIP-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    IN-LINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    60 W

  • Pulsed Drain Current-Max (IDM):

    16 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

STU6N65M2 Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) of the STU6N65M2 is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal characteristics and voltage ratings. As a general rule, it's recommended to operate the device within the specified voltage and current ratings to ensure safe operation.
  • To ensure proper biasing, follow the recommended operating conditions and biasing schemes outlined in the datasheet. Additionally, consider the following: ensure the gate-source voltage (Vgs) is within the recommended range, use a suitable gate resistor to limit the gate current, and provide a stable power supply to the device.
  • For optimal thermal management, follow these guidelines: use a thermally conductive PCB material, ensure good thermal contact between the device and the PCB, use thermal vias to dissipate heat, and consider using a heat sink or thermal interface material. A good PCB layout should also minimize parasitic inductance and ensure proper decoupling of the power supply.
  • To protect the STU6N65M2 from ESD, follow standard ESD handling procedures: use an ESD wrist strap or mat, handle the device by the body or pins, avoid touching the device's pins or die, and use ESD-protected packaging and storage materials.
  • The reliability and lifetime expectations of the STU6N65M2 are dependent on various factors, including operating conditions, environmental factors, and manufacturing quality. Refer to the datasheet for specific reliability data, and consult with STMicroelectronics or a qualified reliability engineer for more information.

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STU6N65M2 Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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