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STW18NM60ND - STMicroelectronics

Description: STW18NM60ND N-Channel MOSFET, 13 A, 600 V FDmesh, 3-Pin TO-247 STMicroelectronics

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STW18NM60ND - STMicroelectronics - PCB symbol
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PCB Footprints
STW18NM60ND - STMicroelectronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-247 height 5.15
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STW18NM60ND - STMicroelectronics - 3D model - Transistor Outline, Vertical - TO-247 height 5.15
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STW18NM60ND Details

  • Manufacturer Part Number:

    STW18NM60ND

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    187 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    13 A

  • Drain-source On Resistance-Max:

    0.29 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    130 W

  • Pulsed Drain Current-Max (IDM):

    52 A

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

STW18NM60ND Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the STW18NM60ND is -40°C to 150°C, as specified in the datasheet. However, it's recommended to derate the device's performance at higher temperatures to ensure reliability and longevity.
  • Proper cooling is crucial for the STW18NM60ND. Ensure good thermal contact between the device and a heat sink, and use a thermal interface material (TIM) to fill any gaps. The heat sink should be designed to dissipate heat efficiently, and the system should be designed to provide adequate airflow.
  • The recommended gate drive voltage for the STW18NM60ND is between 10V and 15V. However, the optimal gate drive voltage may vary depending on the specific application and switching frequency. It's recommended to consult the datasheet and application notes for more information.
  • Yes, the STW18NM60ND is qualified for use in high-reliability and automotive applications. It meets the requirements of the AEC-Q101 standard for automotive-grade power MOSFETs, and is designed to meet the stringent reliability and quality requirements of these applications.
  • The STW18NM60ND is sensitive to ESD. To protect it, handle the device with ESD-safe materials, use ESD-protective packaging, and ensure that the device is properly grounded during handling and assembly. It's also recommended to use ESD protection devices, such as TVS diodes, in the circuit design.

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STW18NM60ND Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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