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STW33N60M6 - STMicroelectronics

Description: N-channel 600 V, 105 mΩ typ., 25 A, MDmesh M6 Power MOSFET in a TO-247 package

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STW33N60M6 - STMicroelectronics - PCB symbol
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PCB Footprints
STW33N60M6 - STMicroelectronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-247 (H=5.15mm)
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STW33N60M6 - STMicroelectronics - 3D model - Transistor Outline, Vertical - TO-247 (H=5.15mm)
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STW33N60M6 Details

  • Manufacturer Part Number:

    STW33N60M6

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    16 Weeks

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    500 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    25 A

  • Drain-source On Resistance-Max:

    0.125 Ω

  • FET Technology:

    SUPERJUNCTION MOSFET

  • Feedback Cap-Max (Crss):

    4.2 pF

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    190 W

  • Pulsed Drain Current-Max (IDM):

    78 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

STW33N60M6 Frequently Asked Questions (FAQs)

  • The maximum operating temperature of the STW33N60M6 is 150°C, as specified in the datasheet. However, it's recommended to derate the power dissipation to ensure reliable operation at high temperatures.
  • The thermal resistance of the STW33N60M6 can be calculated using the junction-to-case thermal resistance (RthJC) and the case-to-ambient thermal resistance (RthCA). The RthJC is specified in the datasheet as 0.5°C/W, and the RthCA depends on the specific heat sink and cooling system used.
  • The recommended gate drive voltage for the STW33N60M6 is between 10V and 15V, as specified in the datasheet. However, the optimal gate drive voltage may vary depending on the specific application and switching frequency.
  • Yes, the STW33N60M6 is suitable for high-frequency switching applications up to 1MHz, thanks to its low gate charge and internal gate resistance. However, it's essential to ensure that the gate drive circuitry and layout are optimized for high-frequency operation.
  • To protect the STW33N60M6 from overvoltage and overcurrent, it's recommended to use a voltage clamp or a transient voltage suppressor (TVS) to limit the voltage across the device. Additionally, a current sense resistor and a fuse can be used to detect and limit excessive current.

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STW33N60M6 Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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