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STWA30N65DM6AG - STMicroelectronics

Description: Automotive-grade N-channel 650 V, 90 mOhm typ., 28 A MDmesh DM6 Power MOSFET in a TO-247 long leads package

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STWA30N65DM6AG - STMicroelectronics - PCB symbol
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STWA30N65DM6AG - STMicroelectronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-247- long lead
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3D Models
STWA30N65DM6AG - STMicroelectronics - 3D model - Transistor Outline, Vertical - TO-247- long lead
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STWA30N65DM6AG Details

  • Manufacturer Part Number:

    STWA30N65DM6AG

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    16 Weeks

  • Date Of Intro:

    2020-02-14

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    600 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    650 V

  • Drain Current-Max (ID):

    28 A

  • Drain-source On Resistance-Max:

    0.11 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    1.5 pF

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    284 W

  • Pulsed Drain Current-Max (IDM):

    112 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

STWA30N65DM6AG Frequently Asked Questions (FAQs)

  • The maximum junction temperature (Tj) for the STWA30N65DM6AG is 175°C. However, it's recommended to keep the junction temperature below 150°C for reliable operation and to ensure a long lifespan.
  • To ensure proper cooling, a heat sink with a thermal resistance of less than 1°C/W is recommended. The heat sink should be attached to the top of the package using a thermal interface material (TIM) with a thermal resistance of less than 0.1°C/W. Additionally, ensure good airflow around the heat sink to dissipate heat efficiently.
  • The recommended gate drive voltage for the STWA30N65DM6AG is between 10V and 15V. A higher gate drive voltage can reduce switching losses, but may also increase gate oxide stress and reduce the lifespan of the device.
  • To protect the STWA30N65DM6AG from overvoltage, use a voltage clamp or a zener diode to limit the voltage to the maximum rated value. For overcurrent protection, use a current sense resistor and a comparator to detect overcurrent conditions. A fuse or a circuit breaker can be used to disconnect the power supply in case of an overcurrent event.
  • The recommended PCB layout for the STWA30N65DM6AG includes a solid ground plane, a separate power plane for the drain and source, and a Kelvin connection for the gate drive. Keep the gate drive traces short and away from the power traces to minimize noise and electromagnetic interference (EMI).

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STWA30N65DM6AG Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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