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STWA35N65DM2 - STMicroelectronics

Description: N-channel 650 V, 0.093 Ohm typ., 32 A MDmesh DM2 Power MOSFET in a TO-247 long leads package

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STWA35N65DM2 - STMicroelectronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-247 long leads package outline
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STWA35N65DM2 - STMicroelectronics  - 3D model - Transistor Outline, Vertical - TO-247 long leads package outline
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STWA35N65DM2 Details

  • Manufacturer Part Number:

    STWA35N65DM2

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    1150 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    650 V

  • Drain Current-Max (ID):

    32 A

  • Drain-source On Resistance-Max:

    0.11 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    2.5 pF

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    250 W

  • Pulsed Drain Current-Max (IDM):

    90 A

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

STWA35N65DM2 Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the STWA35N65DM2 is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal and electrical characteristics. As a general rule, it's recommended to operate the device within the specified maximum ratings and avoid operating conditions that may cause excessive heat, voltage, or current stress.
  • To ensure proper biasing, follow the recommended operating conditions and biasing schemes outlined in the datasheet. Additionally, consider the following: ensure a stable voltage supply, use a suitable gate driver, and maintain a proper duty cycle. It's also essential to consider the device's thermal management and ensure adequate heat sinking.
  • For optimal performance and reliability, follow these guidelines: use a multi-layer PCB with a solid ground plane, keep the device's thermal pad connected to the ground plane, use a heat sink with a thermal interface material, and ensure good airflow around the device. Additionally, consider using thermal vias and a thermal relief pattern to improve heat dissipation.
  • To protect the device from ESD and EOS, follow these guidelines: handle the device with ESD-safe materials and tools, use ESD protection devices such as TVS diodes or ESD arrays, ensure proper PCB layout and routing to minimize parasitic inductance and capacitance, and use a suitable input filter to reduce voltage transients.
  • The reliability and lifetime expectations for the STWA35N65DM2 are dependent on various factors, including operating conditions, environmental factors, and manufacturing quality. As a general guideline, the device is designed to meet the industry-standard reliability requirements for power MOSFETs. However, it's essential to consult the datasheet and relevant application notes for specific guidance on reliability and lifetime expectations.

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STWA35N65DM2 Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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