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STWA40N60M2 - STMicroelectronics

Description: N-channel 600 V, 78 mΩ typ., 34 A MDmesh M2 Power MOSFET in a TO-247 long leads package

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STWA40N60M2 - STMicroelectronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-247 long leads_2022
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STWA40N60M2 - STMicroelectronics  - 3D model - Transistor Outline, Vertical - TO-247 long leads_2022
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STWA40N60M2 Details

  • Manufacturer Part Number:

    STWA40N60M2

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    TO-247, 3 PIN

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    16 Weeks

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    6

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    500 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    34 A

  • Drain-source On Resistance-Max:

    0.088 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    2.4 pF

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    250 W

  • Pulsed Drain Current-Max (IDM):

    136 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

STWA40N60M2 Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the STWA40N60M2 is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal and electrical characteristics. A safe operating area can be determined by considering the device's maximum junction temperature, voltage, and current ratings.
  • To ensure proper cooling, consider the device's thermal resistance (Rth(j-a)) and maximum junction temperature (Tj(max)). Use a heat sink with a sufficient thermal conductivity and surface area to dissipate heat. Also, ensure good thermal contact between the device and heat sink using thermal interface materials and proper mounting techniques.
  • The recommended gate drive voltage for the STWA40N60M2 is typically between 10V to 15V, depending on the specific application and switching frequency. A higher gate drive voltage can improve switching performance, but may also increase power consumption and electromagnetic interference (EMI).
  • To minimize EMI, use proper PCB layout techniques, such as separating high-frequency and low-frequency circuits, using ground planes, and minimizing loop areas. Also, consider using EMI filters, shielding, and snubbers to reduce electromagnetic radiation and conducted emissions.
  • The maximum allowed dv/dt for the STWA40N60M2 is not explicitly stated in the datasheet, but it is typically recommended to limit dv/dt to 10V/ns or less to prevent voltage overshoots and ensure reliable operation.

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STWA40N60M2 Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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