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SZNZ8DH9V1MXWT5G - onsemi

Description: Precise Clamping Voltage; High ESD Ratings; Wettable Flank Package

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SZNZ8DH9V1MXWT5G - onsemi PCB footprint - Other - Other - NZ8DH47VMXWT5G
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SZNZ8DH9V1MXWT5G - onsemi  - 3D model - Other - NZ8DH47VMXWT5G
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SZNZ8DH9V1MXWT5G Details

  • Manufacturer Part Number:

    SZNZ8DH9V1MXWT5G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    XDFNW2 1.00x0.60x0.50, 0.65P

  • Package Description:

    XDFNW2, 2 PIN

  • Manufacturer Package Code:

    521AE

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.50

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    6

  • Breakdown Voltage-Max:

    10.7 V

  • Breakdown Voltage-Min:

    9.3 V

  • Breakdown Voltage-Nom:

    10 V

  • Clamping Voltage-Max:

    10.9 V

  • Configuration:

    SINGLE

  • Diode Element Material:

    SILICON

  • Diode Type:

    TRANS VOLTAGE SUPPRESSOR DIODE

  • JESD-30 Code:

    R-PDSO-N2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Non-rep Peak Rev Power Dis-Max:

    10 W

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Peak Reflow Temperature (Cel):

    260

  • Polarity:

    BIDIRECTIONAL

  • Power Dissipation-Max:

    0.3 W

  • Reference Standard:

    AEC-Q101; IEC-61000-4-2

  • Rep Pk Reverse Voltage-Max:

    6 V

  • Reverse Current-Max:

    0.5 µA

  • Reverse Test Voltage:

    6 V

  • Technology:

    ZENER

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Time@Peak Reflow Temperature-Max (s):

    30

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SZNZ8DH9V1MXWT5G Overview

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