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TC58BVG1S3HBAI4 - KIOXIA Corporation

Description: FLASH - NAND (SLC) Memory IC 2Gbit 63-TFBGA (9x11)

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TC58BVG1S3HBAI4 - KIOXIA Corporation - PCB symbol
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PCB Footprints
TC58BVG1S3HBAI4 - KIOXIA Corporation PCB footprint - BGA - BGA - P-TFBGA63-0911-0.80CZ
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TC58BVG1S3HBAI4 - KIOXIA Corporation - 3D model - BGA - P-TFBGA63-0911-0.80CZ
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TC58BVG1S3HBAI4 Details

  • Manufacturer Part Number:

    TC58BVG1S3HBAI4

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • HTS Code:

    8542.32.00.51

  • Manufacturer:

    KIOXIA

  • YTEOL:

    0

  • Access Time-Max:

    25 ns

  • JESD-30 Code:

    R-PBGA-B63

  • Length:

    11 mm

  • Memory Density:

    2147483648 bit

  • Memory IC Type:

    FLASH

  • Memory Width:

    8

  • Number of Functions:

    1

  • Number of Terminals:

    63

  • Number of Words:

    268435456 words

  • Number of Words Code:

    256000000

  • Operating Mode:

    ASYNCHRONOUS

  • Operating Temperature-Max:

    85 °C

  • Operating Temperature-Min:

    -40 °C

  • Organization:

    256MX8

  • Output Characteristics:

    3-STATE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Code:

    VFBGA

  • Package Equivalence Code:

    BGA63,10X12,32

  • Package Shape:

    RECTANGULAR

  • Package Style:

    GRID ARRAY, VERY THIN PROFILE, FINE PITCH

  • Parallel/Serial:

    SERIAL

  • Programming Voltage:

    3.3 V

  • Seated Height-Max:

    1 mm

  • Standby Current-Max:

    0.00005 A

  • Supply Current-Max:

    0.03 mA

  • Supply Voltage-Max (Vsup):

    3.6 V

  • Supply Voltage-Min (Vsup):

    2.7 V

  • Supply Voltage-Nom (Vsup):

    3.3 V

  • Surface Mount:

    YES

  • Technology:

    CMOS

  • Temperature Grade:

    INDUSTRIAL

  • Terminal Form:

    BALL

  • Terminal Pitch:

    0.8 mm

  • Terminal Position:

    BOTTOM

  • Type:

    NAND TYPE

  • Width:

    9 mm

  • Write Cycle Time-Max (tWC):

    2.5e-8 ms

  • Write Protection:

    HARDWARE

TC58BVG1S3HBAI4 Frequently Asked Questions (FAQs)

  • The recommended operating temperature range for the TC58BVG1S3HBAI4 is -40°C to 85°C, as specified in the datasheet. However, it's essential to note that the device can tolerate a storage temperature range of -55°C to 125°C.
  • The TC58BVG1S3HBAI4 has an internal POR circuit that ensures the device is in a reset state during power-up. The POR sequence is automatically handled by the device, and no external intervention is required. However, it's crucial to ensure that the power supply ramps up slowly (typically within 10 ms) to prevent any issues during the POR sequence.
  • The TC58BVG1S3HBAI4 supports up to 3,000 erase cycles per block, as specified in the datasheet. It's essential to note that the erase cycle endurance may vary depending on the operating conditions and usage patterns.
  • Wear leveling is a technique used to ensure that the erase cycles are evenly distributed across the device to prevent premature wear-out. KIOXIA recommends implementing wear leveling through software-based algorithms that track the erase cycle count for each block and redistribute data accordingly. The datasheet provides guidelines for wear leveling, but the implementation details are left to the system designer.
  • The TC58BVG1S3HBAI4 supports various error detection and correction mechanisms, including ECC (Error-Correcting Code) and CRC (Cyclic Redundancy Check). KIOXIA recommends implementing a combination of ECC and CRC to detect and correct errors during data transfer. The datasheet provides details on the error detection and correction mechanisms, and the system designer should implement the necessary error handling routines accordingly.

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TC58BVG1S3HBAI4 Overview

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