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TC58BVG1S3HTA00 - KIOXIA Corporation

Description: NAND Flash 3.3V 2Gb 24nm SLC NAND (EEPROM)

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PCB Footprints
TC58BVG1S3HTA00 - KIOXIA Corporation PCB footprint - Small Outline Packages - Small Outline Packages - TSOP-48
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3D Models
TC58BVG1S3HTA00 - KIOXIA Corporation  - 3D model - Small Outline Packages - TSOP-48
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TC58BVG1S3HTA00 Details

  • Manufacturer Part Number:

    TC58BVG1S3HTA00

  • Part Life Cycle Code:

    Obsolete

  • Country Of Origin:

    Mainland China, Taiwan

  • ECCN Code:

    EAR99

  • HTS Code:

    8542.32.00.51

  • Manufacturer:

    KIOXIA

  • YTEOL:

    0

  • Access Time-Max:

    25 ns

  • JESD-30 Code:

    R-PDSO-G48

  • Length:

    18.4 mm

  • Memory Density:

    2147483648 bit

  • Memory IC Type:

    FLASH

  • Memory Width:

    8

  • Number of Functions:

    1

  • Number of Terminals:

    48

  • Number of Words:

    268435456 words

  • Number of Words Code:

    256000000

  • Operating Mode:

    ASYNCHRONOUS

  • Operating Temperature-Max:

    70 °C

  • Organization:

    256MX8

  • Output Characteristics:

    3-STATE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Code:

    TSOP1

  • Package Equivalence Code:

    TSSOP48,.8,20

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE, THIN PROFILE

  • Parallel/Serial:

    SERIAL

  • Programming Voltage:

    3.3 V

  • Seated Height-Max:

    1.2 mm

  • Standby Current-Max:

    0.00005 A

  • Supply Current-Max:

    0.03 mA

  • Supply Voltage-Max (Vsup):

    3.6 V

  • Supply Voltage-Min (Vsup):

    2.7 V

  • Supply Voltage-Nom (Vsup):

    3.3 V

  • Surface Mount:

    YES

  • Technology:

    CMOS

  • Temperature Grade:

    COMMERCIAL

  • Terminal Form:

    GULL WING

  • Terminal Pitch:

    0.5 mm

  • Terminal Position:

    DUAL

  • Type:

    NAND TYPE

  • Width:

    12 mm

  • Write Cycle Time-Max (tWC):

    2.5e-8 ms

  • Write Protection:

    HARDWARE

TC58BVG1S3HTA00 Frequently Asked Questions (FAQs)

  • The recommended operating temperature range for the TC58BVG1S3HTA00 is -40°C to 85°C.
  • The power-on sequence for the TC58BVG1S3HTA00 is VCC first, then VPP, and finally CLK. This sequence is recommended to ensure proper device operation.
  • The TC58BVG1S3HTA00 supports up to 3,000 erase cycles per block.
  • The write protection mechanism on the TC58BVG1S3HTA00 can be controlled using the WP pin. When the WP pin is low, the device is in write-protect mode, and when it is high, the device is in write-enable mode.
  • To enter power-down mode, the CE pin should be set high, and the CLK pin should be set low. This will reduce power consumption and put the device in a low-power state.

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TC58BVG1S3HTA00 Overview

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