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TC58CYG2S0HRAIG - Toshiba

Description: NAND Flash 1.8V 4Gb 24nm Serial NAND

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TC58CYG2S0HRAIG - Toshiba PCB footprint - Small Outline No-lead - Small Outline No-lead - P-WSON8
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3D Models
TC58CYG2S0HRAIG - Toshiba  - 3D model - Small Outline No-lead - P-WSON8
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TC58CYG2S0HRAIG Details

  • Manufacturer Part Number:

    TC58CYG2S0HRAIG

  • Part Life Cycle Code:

    Transferred

  • Package Description:

    WSON-8

  • ECCN Code:

    EAR99

  • HTS Code:

    8542.32.00.51

  • Date Of Intro:

    2017-12-14

  • Manufacturer:

    Toshiba America Electronic Components

  • Clock Frequency-Max (fCLK):

    104 MHz

  • JESD-30 Code:

    R-PDSO-N8

  • Length:

    8 mm

  • Memory Density:

    4294967296 bit

  • Memory IC Type:

    FLASH

  • Memory Width:

    1

  • Number of Functions:

    1

  • Number of Terminals:

    8

  • Number of Words:

    4294967296 words

  • Number of Words Code:

    4000000000

  • Operating Mode:

    SYNCHRONOUS

  • Operating Temperature-Max:

    85 °C

  • Operating Temperature-Min:

    -40 °C

  • Organization:

    4GX1

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Code:

    HVSON

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

  • Parallel/Serial:

    SERIAL

  • Programming Voltage:

    1.8 V

  • Seated Height-Max:

    0.8 mm

  • Supply Voltage-Max (Vsup):

    1.95 V

  • Supply Voltage-Min (Vsup):

    1.7 V

  • Surface Mount:

    YES

  • Technology:

    CMOS

  • Temperature Grade:

    INDUSTRIAL

  • Terminal Form:

    NO LEAD

  • Terminal Pitch:

    1.27 mm

  • Terminal Position:

    DUAL

  • Width:

    6 mm

TC58CYG2S0HRAIG Frequently Asked Questions (FAQs)

  • The recommended operating temperature range for the TC58CYG2S0HRAIG is -40°C to 85°C.
  • The power-up and power-down sequences for the TC58CYG2S0HRAIG should be handled according to the datasheet, with a slow ramp-up and ramp-down of the power supply voltage to prevent damage to the device.
  • The maximum allowable voltage for the TC58CYG2S0HRAIG is 3.6V, and exceeding this voltage may cause damage to the device.
  • To ensure data integrity and prevent data corruption during power failures or brownouts, it is recommended to use a capacitor or other energy storage device to maintain power to the TC58CYG2S0HRAIG for a short period of time, allowing the device to complete any pending write operations.
  • The typical access time for the TC58CYG2S0HRAIG is 70ns, but this may vary depending on the specific application and operating conditions.

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