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TC58NVG1S3EBAI5 - Toshiba

Description: TC58NVG1S3EBAI5, Parallel NAND Flash Memory, 256M x 8 2 GByte, 25ns, 2.7 → 3.6 V, 63-Pin, TFBGA

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TC58NVG1S3EBAI5 - Toshiba PCB footprint - BGA - BGA - P-TFBGA63-1013-0.80AZ
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TC58NVG1S3EBAI5 - Toshiba  - 3D model - BGA - P-TFBGA63-1013-0.80AZ
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TC58NVG1S3EBAI5 Details

  • Manufacturer Part Number:

    TC58NVG1S3EBAI5

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    BGA

  • Package Description:

    TFBGA-63

  • Pin Count:

    63

  • Direct Group:

    ME1009482EI1

  • Similar Group:

    ME101042105310021040YYYY

  • ECCN Code:

    EAR99

  • HTS Code:

    8542.32.00.51

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    0

  • Endurance:

    100000 Write/Erase Cycles

  • JESD-30 Code:

    R-PBGA-B63

  • Length:

    13 mm

  • Memory Density:

    2147483648 bit

  • Memory IC Type:

    FLASH

  • Memory Width:

    8

  • Number of Functions:

    1

  • Number of Terminals:

    63

  • Number of Words:

    268435456 words

  • Number of Words Code:

    256000000

  • Operating Mode:

    ASYNCHRONOUS

  • Operating Temperature-Max:

    85 °C

  • Operating Temperature-Min:

    -40 °C

  • Organization:

    256MX8

  • Output Characteristics:

    3-STATE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Code:

    VFBGA

  • Package Equivalence Code:

    BGA63,10X12,32

  • Package Shape:

    RECTANGULAR

  • Package Style:

    GRID ARRAY, VERY THIN PROFILE, FINE PITCH

  • Parallel/Serial:

    SERIAL

  • Programming Voltage:

    3.3 V

  • Qualification Status:

    Not Qualified

  • Seated Height-Max:

    1 mm

  • Standby Current-Max:

    0.00005 A

  • Supply Current-Max:

    0.03 mA

  • Supply Voltage-Max (Vsup):

    3.6 V

  • Supply Voltage-Min (Vsup):

    2.7 V

  • Supply Voltage-Nom (Vsup):

    3.3 V

  • Surface Mount:

    YES

  • Technology:

    CMOS

  • Temperature Grade:

    INDUSTRIAL

  • Terminal Form:

    BALL

  • Terminal Pitch:

    0.8 mm

  • Terminal Position:

    BOTTOM

  • Type:

    NAND TYPE

  • Width:

    10 mm

  • Write Cycle Time-Max (tWC):

    0.000025 ms

  • Write Protection:

    HARDWARE

TC58NVG1S3EBAI5 Frequently Asked Questions (FAQs)

  • The recommended operating voltage range for the TC58NVG1S3EBAI5 is 2.7V to 3.6V.
  • The power-up sequence should be VCC first, then VIO, and then the clock signal. For power-down, the sequence should be reversed. It's also recommended to follow the power-up and power-down sequences specified in the datasheet to prevent damage to the device.
  • The maximum clock frequency supported by the TC58NVG1S3EBAI5 is 104 MHz.
  • The write protection mechanism in the TC58NVG1S3EBAI5 can be handled by using the WP pin to enable or disable write protection. When the WP pin is low, the device is in write-protect mode, and when it's high, the device is in write-enable mode.
  • The maximum data retention period for the TC58NVG1S3EBAI5 is 10 years at a temperature of 85°C.

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