Please enter a minimum 3 letters or numbers
Technical Content
Part Image

TH58NVG3S0HBAI4 - Toshiba

Description: NAND Flash 3.3V 8Gb 24nm SLC NAND (EEPROM)

Download TH58NVG3S0HBAI4 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
Send part feedback
Symbol
TH58NVG3S0HBAI4 - Toshiba - PCB symbol
click to zoom
PCB Footprints
TH58NVG3S0HBAI4 - Toshiba PCB footprint - BGA - BGA - P-TFBGA63-0911-0.80CZ
click to zoom
3D Models
TH58NVG3S0HBAI4 - Toshiba - 3D model - BGA - P-TFBGA63-0911-0.80CZ
click to zoom

TH58NVG3S0HBAI4 Details

  • Manufacturer Part Number:

    TH58NVG3S0HBAI4

  • Part Life Cycle Code:

    Transferred

  • Package Description:

    BGA-63

  • ECCN Code:

    EAR99

  • HTS Code:

    8542.32.00.51

  • Manufacturer:

    Toshiba America Electronic Components

  • JESD-30 Code:

    R-PBGA-B63

  • Length:

    11 mm

  • Memory Density:

    8589934592 bit

  • Memory IC Type:

    FLASH

  • Memory Width:

    8

  • Number of Functions:

    1

  • Number of Terminals:

    63

  • Number of Words:

    1073741824 words

  • Number of Words Code:

    1000000000

  • Operating Mode:

    ASYNCHRONOUS

  • Operating Temperature-Max:

    85 °C

  • Operating Temperature-Min:

    -40 °C

  • Organization:

    1GX8

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Code:

    BGA

  • Package Equivalence Code:

    BGA63,10X12,32

  • Package Shape:

    RECTANGULAR

  • Package Style:

    GRID ARRAY, VERY THIN PROFILE, FINE PITCH

  • Parallel/Serial:

    SERIAL

  • Programming Voltage:

    3.3 V

  • Seated Height-Max:

    1 mm

  • Supply Voltage-Max (Vsup):

    3.6 V

  • Supply Voltage-Min (Vsup):

    2.7 V

  • Supply Voltage-Nom (Vsup):

    3.3 V

  • Surface Mount:

    YES

  • Technology:

    CMOS

  • Temperature Grade:

    INDUSTRIAL

  • Terminal Form:

    BALL

  • Terminal Pitch:

    0.8 mm

  • Terminal Position:

    BOTTOM

  • Type:

    SLC NAND TYPE

  • Width:

    9 mm

  • Write Protection:

    HARDWARE

TH58NVG3S0HBAI4 Frequently Asked Questions (FAQs)

  • The recommended operating temperature range for the TH58NVG3S0HBAI4 is -40°C to 85°C.
  • The TH58NVG3S0HBAI4 has a built-in bad block management system. The device automatically detects and replaces bad blocks with spare blocks. However, it is recommended to implement additional error correction and bad block management mechanisms in the system design to ensure data integrity.
  • The TH58NVG3S0HBAI4 has a maximum of 3,000 program/erase cycles. It is recommended to implement wear leveling and garbage collection mechanisms to ensure the device's lifespan.
  • The TH58NVG3S0HBAI4 has a data retention period of 10 years at a temperature of 25°C. To ensure data retention, it is recommended to follow proper storage and handling procedures, and to implement data refresh mechanisms in the system design.
  • The recommended power-up sequence for the TH58NVG3S0HBAI4 is to apply VCC first, followed by VCCQ, and then the clock signal. It is also recommended to ensure that the power supply is stable and within the specified voltage range before accessing the device.

Trust Checks

This model has been provided by community users.
Community Provided
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

TH58NVG3S0HBAI4 Overview

Use the download button to access the TH58NVG3S0HBAI4 schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like TH58N, or try a keyword search, such as Flash Memories

Parts related to TH58NVG3S0HBAI4

Showing 0 results

Part Image

← Prev Next →
About Us Contact Us Terms of Service Do not sell or share my personal information Privacy Policy Digital Services Act Library Loader

All content Copyright © 2020, Supplyframe.com. All rights reserved. Back to top ↑