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TH58NVG4S0FTAK0 - Toshiba

Description: NAND Flash 3.3V 16Gb 32nm ITemp SLC NAND (EEPROM)

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TH58NVG4S0FTAK0 - Toshiba PCB footprint - Small Outline Packages - Small Outline Packages - tsop I 48-P-1220-0.50
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TH58NVG4S0FTAK0 - Toshiba  - 3D model - Small Outline Packages - tsop I 48-P-1220-0.50
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TH58NVG4S0FTAK0 Details

  • Manufacturer Part Number:

    TH58NVG4S0FTAK0

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Transferred

  • Package Description:

    TSOP-48

  • ECCN Code:

    EAR99

  • HTS Code:

    8542.32.00.51

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    2

  • JESD-30 Code:

    R-PDSO-G48

  • Length:

    18.4 mm

  • Memory Density:

    17179869184 bit

  • Memory IC Type:

    FLASH

  • Memory Width:

    8

  • Number of Functions:

    1

  • Number of Terminals:

    48

  • Number of Words:

    2147483648 words

  • Number of Words Code:

    2000000000

  • Operating Mode:

    ASYNCHRONOUS

  • Operating Temperature-Max:

    85 °C

  • Operating Temperature-Min:

    -40 °C

  • Organization:

    2GX8

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Code:

    TSOP

  • Package Equivalence Code:

    TSSOP48,.8,20

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE, THIN PROFILE

  • Parallel/Serial:

    SERIAL

  • Peak Reflow Temperature (Cel):

    260

  • Programming Voltage:

    3.3 V

  • Seated Height-Max:

    1.2 mm

  • Supply Voltage-Max (Vsup):

    3.6 V

  • Supply Voltage-Min (Vsup):

    2.7 V

  • Supply Voltage-Nom (Vsup):

    3.3 V

  • Surface Mount:

    YES

  • Technology:

    CMOS

  • Temperature Grade:

    INDUSTRIAL

  • Terminal Form:

    GULL WING

  • Terminal Pitch:

    0.5 mm

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Type:

    SLC NAND TYPE

  • Width:

    12 mm

  • Write Protection:

    HARDWARE

TH58NVG4S0FTAK0 Frequently Asked Questions (FAQs)

  • The recommended operating temperature range for the TH58NVG4S0FTAK0 is -40°C to 85°C.
  • The TH58NVG4S0FTAK0 has a built-in bad block management system. The device automatically detects and replaces bad blocks with spare blocks. However, it is recommended to implement additional error correction and bad block management mechanisms in the system design to ensure data integrity.
  • The TH58NVG4S0FTAK0 has a maximum of 3,000 program/erase cycles per block. It is recommended to implement wear leveling and garbage collection mechanisms to ensure even wear and extend the lifespan of the device.
  • The TH58NVG4S0FTAK0 has a data retention period of 1 year at 25°C. To ensure data retention, it is recommended to implement a periodic refresh mechanism to rewrite the data every 6-12 months, depending on the application requirements.
  • The recommended power-up sequence for the TH58NVG4S0FTAK0 is to apply VCC first, followed by VPP, and then the clock signal. This ensures proper device initialization and prevents damage to the device.

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