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TIP122G - onsemi

Description: Plastic Medium-Power Complementary Silicon Transistors DARLINGTON 5 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60−80−100 VOLTS, 65 WATTS –65 to +150 °C

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PCB Footprints
TIP122G - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO−220−3 10.10x15.12x4.45, 2.54P CASE 221A ISSUE AL_2026-1
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3D Models
TIP122G - onsemi  - 3D model - Transistor Outline, Vertical - TO−220−3 10.10x15.12x4.45, 2.54P CASE 221A ISSUE AL_2026-1
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  • Datasheet Download Datasheet
  • Stock & Prices $ Price & Stock for TIP122G
  • Part Number TIP122G
  • Manufacturer onsemi
  • Pin Count 3
  • Part Category Transistor Darlington Pair
  • Package Category Transistor Outline, Vertical
  • Footprint Name Transistor Outline, Vertical - TO−220−3 10.10x15.12x4.45, 2.54P CASE 221A ISSUE AL_2026-1
  • Released Date Nov 3, 2015
  • Last Modified Date Jan 22, 2025 4:53 PM UTC
  • Pinout / Pin List Click Here (Member Only)

TIP122G Details

  • Manufacturer Part Number:

    TIP122G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-220 3 LEAD STANDARD

  • Package Description:

    LEAD FREE, PLASTIC, CASE 221A-09, 3 PIN

  • Pin Count:

    3

  • Manufacturer Package Code:

    221A

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Factory Lead Time:

    10 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    4

  • Additional Feature:

    LEADFORM OPTIONS ARE AVAILABLE

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    5 A

  • Collector-Emitter Voltage-Max:

    100 V

  • Configuration:

    DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

  • DC Current Gain-Min (hFE):

    1000

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    NPN

  • Power Dissipation Ambient-Max:

    2 W

  • Power Dissipation-Max (Abs):

    65 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    4 MHz

TIP122G Frequently Asked Questions (FAQs)

  • The maximum collector-emitter voltage (Vce) for the TIP122G is 100V. Exceeding this voltage may damage the transistor.
  • The power dissipation of the TIP122G can be calculated using the formula: Pd = Vce x Ic, where Vce is the collector-emitter voltage and Ic is the collector current. The maximum power dissipation is 65W.
  • The minimum current gain (hFE) of the TIP122G is 1000 at IC = 1A and Vce = 2V.
  • Yes, the TIP122G can be used as a switch. It has a low saturation voltage (Vce(sat)) of 2V at IC = 1A, making it suitable for switching applications.
  • The maximum operating temperature of the TIP122G is 150°C. Operating the transistor above this temperature may reduce its reliability and lifespan.

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TIP122G Overview

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Part Image TIP122 Baneasa SA

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