Description:Low Leakage Current ICEO = 1.0 mA @ 30 and 60 V; High Current Gain Bandwidth Product -; Excellent DC Gain hFE = 40 Typ @ 15 A; 25 A Collector Current; Pb-Free Packages are Available
The maximum SOA for the TIP35AG is not explicitly stated in the datasheet, but it can be estimated based on the transistor's thermal resistance and maximum junction temperature. A safe operating area can be assumed to be around 10A and 30V.
To ensure linear operation, the TIP35AG should be biased in the active region, with a base-emitter voltage (Vbe) between 0.6V and 0.8V, and a collector-emitter voltage (Vce) greater than 1V. The base current should be limited to prevent saturation.
The maximum switching frequency for the TIP35AG is not explicitly stated in the datasheet, but it can be estimated based on the transistor's rise and fall times. A safe switching frequency can be assumed to be around 100 kHz to 200 kHz.
To protect the TIP35AG from ESD, it is recommended to use ESD protection devices such as TVS diodes or ESD protection arrays, and to follow proper handling and storage procedures to prevent static electricity buildup.
The thermal resistance of the TIP35AG is not explicitly stated in the datasheet, but it can be estimated based on the transistor's package type and size. A typical thermal resistance for the TO-220 package is around 2°C/W to 5°C/W.
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