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TIP35CG - onsemi

Description: Low Leakage Current ICEO = 1.0 mA @ 30 and 60 V; High Current Gain Bandwidth Product -; Excellent DC Gain hFE = 40 Typ @ 15 A; 25 A Collector Current; Pb-Free Packages are Available

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PCB Footprints
TIP35CG - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-247 CASE 340L-02
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3D Models
TIP35CG - onsemi  - 3D model - Transistor Outline, Vertical - TO-247 CASE 340L-02
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TIP35CG Details

  • Manufacturer Part Number:

    TIP35CG

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-247

  • Package Description:

    LEAD FREE, CASE 340D-02, 3 PIN

  • Pin Count:

    3

  • Manufacturer Package Code:

    340L

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    10 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    4

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    25 A

  • Collector-Emitter Voltage-Max:

    100 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    15

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    NPN

  • Power Dissipation-Max (Abs):

    125 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    3 MHz

TIP35CG Frequently Asked Questions (FAQs)

  • The maximum SOA for the TIP35CG is typically defined by the voltage and current ratings, but it's essential to consider the thermal limitations and ensure the device operates within the recommended temperature range to prevent thermal runaway.
  • To ensure linear operation, the TIP35CG should be biased in the active region, with a base-emitter voltage (Vbe) between 0.6V to 0.8V, and a collector-emitter voltage (Vce) greater than 1V. The base current should be limited to prevent saturation.
  • A heatsink with a thermal resistance of 10°C/W or lower is recommended for the TIP35CG. The heatsink should be designed to provide good thermal contact with the transistor, and thermal interface material (TIM) can be used to reduce thermal resistance.
  • Yes, the TIP35CG can be used as a switch, but it's essential to ensure the transistor is fully saturated (Vce(sat) < 0.5V) to minimize power losses. The base drive should be sufficient to ensure fast switching times, and the collector current should be limited to prevent overheating.
  • To protect the TIP35CG from ESD, handle the device by the body or use an anti-static wrist strap. Ensure the workspace is ESD-protected, and use ESD-protected packaging and storage materials. Avoid touching the device's pins or leads, and use a grounded tip soldering iron when soldering.

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TIP35CG Overview

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Part Image TIP35C onsemi

Power Bipolar Transistor, 25A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-218, Plastic/Epoxy, 3 Pin